Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors

Autores
Intronati, Guido Alfredo; Tamborenea, Pablo Ignacio; Weinmann, D.; Jalabert, Rodolfo
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.
Fil: Intronati, Guido Alfredo. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Tamborenea, Pablo Ignacio. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Weinmann, D.. Université de Strasbourg; Francia
Fil: Jalabert, Rodolfo. Université de Strasbourg; Francia
Materia
Impurity Band
Metal-Insulator Transition
Semiconductors
Spin Relaxation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/56106
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/56106
network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductorsIntronati, Guido AlfredoTamborenea, Pablo IgnacioWeinmann, D.Jalabert, RodolfoImpurity BandMetal-Insulator TransitionSemiconductorsSpin Relaxationhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.Fil: Intronati, Guido Alfredo. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Tamborenea, Pablo Ignacio. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Weinmann, D.. Université de Strasbourg; FranciaFil: Jalabert, Rodolfo. Université de Strasbourg; FranciaElsevier Science2012-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/56106Intronati, Guido Alfredo; Tamborenea, Pablo Ignacio; Weinmann, D.; Jalabert, Rodolfo; Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors; Elsevier Science; Physica B: Condensed Matter; 407; 16; 8-2012; 3252-32550921-4526CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0921452611012725info:eu-repo/semantics/altIdentifier/doi/10.1016/j.physb.2011.12.079info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-17T10:42:08Zoai:ri.conicet.gov.ar:11336/56106instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-17 10:42:09.098CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
title Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
spellingShingle Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
Intronati, Guido Alfredo
Impurity Band
Metal-Insulator Transition
Semiconductors
Spin Relaxation
title_short Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
title_full Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
title_fullStr Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
title_full_unstemmed Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
title_sort Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
dc.creator.none.fl_str_mv Intronati, Guido Alfredo
Tamborenea, Pablo Ignacio
Weinmann, D.
Jalabert, Rodolfo
author Intronati, Guido Alfredo
author_facet Intronati, Guido Alfredo
Tamborenea, Pablo Ignacio
Weinmann, D.
Jalabert, Rodolfo
author_role author
author2 Tamborenea, Pablo Ignacio
Weinmann, D.
Jalabert, Rodolfo
author2_role author
author
author
dc.subject.none.fl_str_mv Impurity Band
Metal-Insulator Transition
Semiconductors
Spin Relaxation
topic Impurity Band
Metal-Insulator Transition
Semiconductors
Spin Relaxation
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.
Fil: Intronati, Guido Alfredo. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Tamborenea, Pablo Ignacio. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Weinmann, D.. Université de Strasbourg; Francia
Fil: Jalabert, Rodolfo. Université de Strasbourg; Francia
description We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.
publishDate 2012
dc.date.none.fl_str_mv 2012-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/56106
Intronati, Guido Alfredo; Tamborenea, Pablo Ignacio; Weinmann, D.; Jalabert, Rodolfo; Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors; Elsevier Science; Physica B: Condensed Matter; 407; 16; 8-2012; 3252-3255
0921-4526
CONICET Digital
CONICET
url http://hdl.handle.net/11336/56106
identifier_str_mv Intronati, Guido Alfredo; Tamborenea, Pablo Ignacio; Weinmann, D.; Jalabert, Rodolfo; Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors; Elsevier Science; Physica B: Condensed Matter; 407; 16; 8-2012; 3252-3255
0921-4526
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0921452611012725
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.physb.2011.12.079
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1843605884555493376
score 13.001348

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