Two-dimensional brain microtubule structures behave as memristive devices

Autores
Cantero, María del Rocío; Perez, Paula L.; Scarinci, María Noelia; Cantiello, Horacio Fabio
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Microtubules (MTs) are cytoskeletal structures that play a central role in a variety of cell functions including cell division and cargo transfer. MTs are also nonlinear electrical transmission lines that produce and conduct electrical oscillations elicited by changes in either electric field and/or ionic gradients. The oscillatory behavior of MTs requires a voltage-sensitive gating mechanism to enable the electrodiffusional ionic movement through the MT wall. Here we explored the electrical response of non-oscillating rat brain MT sheets to square voltage steps. To ascertain the nature of the possible gating mechanism, the electrical response of non-oscillating rat brain MT sheets (2D arrays of MTs) to square pulses was analyzed under voltage-clamping conditions. A complex voltage-dependent nonlinear charge movement was observed, which represented the summation of two events. The first contribution was a small, saturating, voltage-dependent capacitance with a maximum charge displacement in the range of 4 fC/μm2. A second, major contribution was a non-saturating voltage-dependent charge transfer, consistent with the properties of a multistep memristive device. The memristive capabilities of MTs could drive oscillatory behavior, and enable voltage-driven neuromorphic circuits and architectures within neurons.
Fil: Cantero, María del Rocío. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Fil: Perez, Paula L.. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Fil: Scarinci, María Noelia. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Fil: Cantiello, Horacio Fabio. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Materia
MICROTUBULES
MEMRISTORS
OSCILLATIONS
ELECTROPHYSIOLOGY
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/107477
Acceder
id CONICETDig_096f4adb43715b60f8c17cd476b0ee8e
oai_identifier_str oai:ri.conicet.gov.ar:11336/107477
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Two-dimensional brain microtubule structures behave as memristive devicesCantero, María del RocíoPerez, Paula L.Scarinci, María NoeliaCantiello, Horacio FabioMICROTUBULESMEMRISTORSOSCILLATIONSELECTROPHYSIOLOGYhttps://purl.org/becyt/ford/1.6https://purl.org/becyt/ford/1Microtubules (MTs) are cytoskeletal structures that play a central role in a variety of cell functions including cell division and cargo transfer. MTs are also nonlinear electrical transmission lines that produce and conduct electrical oscillations elicited by changes in either electric field and/or ionic gradients. The oscillatory behavior of MTs requires a voltage-sensitive gating mechanism to enable the electrodiffusional ionic movement through the MT wall. Here we explored the electrical response of non-oscillating rat brain MT sheets to square voltage steps. To ascertain the nature of the possible gating mechanism, the electrical response of non-oscillating rat brain MT sheets (2D arrays of MTs) to square pulses was analyzed under voltage-clamping conditions. A complex voltage-dependent nonlinear charge movement was observed, which represented the summation of two events. The first contribution was a small, saturating, voltage-dependent capacitance with a maximum charge displacement in the range of 4 fC/μm2. A second, major contribution was a non-saturating voltage-dependent charge transfer, consistent with the properties of a multistep memristive device. The memristive capabilities of MTs could drive oscillatory behavior, and enable voltage-driven neuromorphic circuits and architectures within neurons.Fil: Cantero, María del Rocío. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; ArgentinaFil: Perez, Paula L.. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; ArgentinaFil: Scarinci, María Noelia. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; ArgentinaFil: Cantiello, Horacio Fabio. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; ArgentinaNature2019-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/107477Cantero, María del Rocío; Perez, Paula L.; Scarinci, María Noelia; Cantiello, Horacio Fabio; Two-dimensional brain microtubule structures behave as memristive devices; Nature; Scientific Reports; 9; 1; 8-2019; 1-102045-2322CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://www.nature.com/articles/s41598-019-48677-1info:eu-repo/semantics/altIdentifier/doi/10.1038/s41598-019-48677-1info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:54:25Zoai:ri.conicet.gov.ar:11336/107477instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:54:26.101CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Two-dimensional brain microtubule structures behave as memristive devices
title Two-dimensional brain microtubule structures behave as memristive devices
spellingShingle Two-dimensional brain microtubule structures behave as memristive devices
Cantero, María del Rocío
MICROTUBULES
MEMRISTORS
OSCILLATIONS
ELECTROPHYSIOLOGY
title_short Two-dimensional brain microtubule structures behave as memristive devices
title_full Two-dimensional brain microtubule structures behave as memristive devices
title_fullStr Two-dimensional brain microtubule structures behave as memristive devices
title_full_unstemmed Two-dimensional brain microtubule structures behave as memristive devices
title_sort Two-dimensional brain microtubule structures behave as memristive devices
dc.creator.none.fl_str_mv Cantero, María del Rocío
Perez, Paula L.
Scarinci, María Noelia
Cantiello, Horacio Fabio
author Cantero, María del Rocío
author_facet Cantero, María del Rocío
Perez, Paula L.
Scarinci, María Noelia
Cantiello, Horacio Fabio
author_role author
author2 Perez, Paula L.
Scarinci, María Noelia
Cantiello, Horacio Fabio
author2_role author
author
author
dc.subject.none.fl_str_mv MICROTUBULES
MEMRISTORS
OSCILLATIONS
ELECTROPHYSIOLOGY
topic MICROTUBULES
MEMRISTORS
OSCILLATIONS
ELECTROPHYSIOLOGY
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.6
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Microtubules (MTs) are cytoskeletal structures that play a central role in a variety of cell functions including cell division and cargo transfer. MTs are also nonlinear electrical transmission lines that produce and conduct electrical oscillations elicited by changes in either electric field and/or ionic gradients. The oscillatory behavior of MTs requires a voltage-sensitive gating mechanism to enable the electrodiffusional ionic movement through the MT wall. Here we explored the electrical response of non-oscillating rat brain MT sheets to square voltage steps. To ascertain the nature of the possible gating mechanism, the electrical response of non-oscillating rat brain MT sheets (2D arrays of MTs) to square pulses was analyzed under voltage-clamping conditions. A complex voltage-dependent nonlinear charge movement was observed, which represented the summation of two events. The first contribution was a small, saturating, voltage-dependent capacitance with a maximum charge displacement in the range of 4 fC/μm2. A second, major contribution was a non-saturating voltage-dependent charge transfer, consistent with the properties of a multistep memristive device. The memristive capabilities of MTs could drive oscillatory behavior, and enable voltage-driven neuromorphic circuits and architectures within neurons.
Fil: Cantero, María del Rocío. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Fil: Perez, Paula L.. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Fil: Scarinci, María Noelia. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
Fil: Cantiello, Horacio Fabio. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet Noa Sur. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo. - Universidad Nacional de Santiago del Estero. Instituto Multidisciplinario de Salud, Tecnologia y Desarrollo.; Argentina
description Microtubules (MTs) are cytoskeletal structures that play a central role in a variety of cell functions including cell division and cargo transfer. MTs are also nonlinear electrical transmission lines that produce and conduct electrical oscillations elicited by changes in either electric field and/or ionic gradients. The oscillatory behavior of MTs requires a voltage-sensitive gating mechanism to enable the electrodiffusional ionic movement through the MT wall. Here we explored the electrical response of non-oscillating rat brain MT sheets to square voltage steps. To ascertain the nature of the possible gating mechanism, the electrical response of non-oscillating rat brain MT sheets (2D arrays of MTs) to square pulses was analyzed under voltage-clamping conditions. A complex voltage-dependent nonlinear charge movement was observed, which represented the summation of two events. The first contribution was a small, saturating, voltage-dependent capacitance with a maximum charge displacement in the range of 4 fC/μm2. A second, major contribution was a non-saturating voltage-dependent charge transfer, consistent with the properties of a multistep memristive device. The memristive capabilities of MTs could drive oscillatory behavior, and enable voltage-driven neuromorphic circuits and architectures within neurons.
publishDate 2019
dc.date.none.fl_str_mv 2019-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/107477
Cantero, María del Rocío; Perez, Paula L.; Scarinci, María Noelia; Cantiello, Horacio Fabio; Two-dimensional brain microtubule structures behave as memristive devices; Nature; Scientific Reports; 9; 1; 8-2019; 1-10
2045-2322
CONICET Digital
CONICET
url http://hdl.handle.net/11336/107477
identifier_str_mv Cantero, María del Rocío; Perez, Paula L.; Scarinci, María Noelia; Cantiello, Horacio Fabio; Two-dimensional brain microtubule structures behave as memristive devices; Nature; Scientific Reports; 9; 1; 8-2019; 1-10
2045-2322
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://www.nature.com/articles/s41598-019-48677-1
info:eu-repo/semantics/altIdentifier/doi/10.1038/s41598-019-48677-1
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Nature
publisher.none.fl_str_mv Nature
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846782242829893632
score 12.982451

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