MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet
- Autores
- Wassinger, Nicolás; Maestri, Sebastian Oscar; Garcia Retegui, Rogelio Adrian; Funes, Marcos Alan; Antoszczuk, Pablo Daniel; Pittet, S.
- Año de publicación
- 2023
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The upgrade of the Large Hadron Collider (LHC) at CERN towards the High Luminosity-LHC (HL-LHC) presents different challenges, among them, the upgrade of the power converters associated to the inner triplet magnets to reach the required rated current of 18kA. In order to reach this current and to accomplish the stringent requirements associated to this kind of application, even under a fault scenario, redundancy and modularity are foreseen in the converter design. Consequently, the development of a 18kA/±10V power converter built from 10 parallel-connected sub-converters, each consisting of M modules, is carried out. Additionally, due to the converter being installed in an underground gallery, most of the heat must be extracted by using a water cooling system. Therefore, the reduction of power losses and an appropriate thermal design become key factors. These requirements, together with the large number of devices associated with the parallelization-based modular system, determine the choice of switching semiconductor devices as an important aspect in the design of the converter. This paper presents the process carried out for the choice of semiconductor devices based on analysis of power losses, thermal behavior and integration complexity. In this process, multiple variants in terms of semiconductor, number of modules, parallelization of devices, and switching frequency are considered. The proper operation of the selected device was verified on a 2kA sub-converter prototype based on the interconnection of 9 MOSFET based modules.
Fil: Wassinger, Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina
Fil: Maestri, Sebastian Oscar. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina
Fil: Garcia Retegui, Rogelio Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina
Fil: Funes, Marcos Alan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina
Fil: Antoszczuk, Pablo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina
Fil: Pittet, S.. Cern - European Organization for Nuclear Research; Suiza - Materia
-
INNER TRIPLET MAGNETS
MOSFET PARALLELIZATION
THERMAL PERFORMANCE
HL-LHC - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/230455
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MOSFET Selection for a 18ka modular power converter for HL-LHC inner tripletWassinger, NicolásMaestri, Sebastian OscarGarcia Retegui, Rogelio AdrianFunes, Marcos AlanAntoszczuk, Pablo DanielPittet, S.INNER TRIPLET MAGNETSMOSFET PARALLELIZATIONTHERMAL PERFORMANCEHL-LHChttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The upgrade of the Large Hadron Collider (LHC) at CERN towards the High Luminosity-LHC (HL-LHC) presents different challenges, among them, the upgrade of the power converters associated to the inner triplet magnets to reach the required rated current of 18kA. In order to reach this current and to accomplish the stringent requirements associated to this kind of application, even under a fault scenario, redundancy and modularity are foreseen in the converter design. Consequently, the development of a 18kA/±10V power converter built from 10 parallel-connected sub-converters, each consisting of M modules, is carried out. Additionally, due to the converter being installed in an underground gallery, most of the heat must be extracted by using a water cooling system. Therefore, the reduction of power losses and an appropriate thermal design become key factors. These requirements, together with the large number of devices associated with the parallelization-based modular system, determine the choice of switching semiconductor devices as an important aspect in the design of the converter. This paper presents the process carried out for the choice of semiconductor devices based on analysis of power losses, thermal behavior and integration complexity. In this process, multiple variants in terms of semiconductor, number of modules, parallelization of devices, and switching frequency are considered. The proper operation of the selected device was verified on a 2kA sub-converter prototype based on the interconnection of 9 MOSFET based modules.Fil: Wassinger, Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; ArgentinaFil: Maestri, Sebastian Oscar. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; ArgentinaFil: Garcia Retegui, Rogelio Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; ArgentinaFil: Funes, Marcos Alan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; ArgentinaFil: Antoszczuk, Pablo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; ArgentinaFil: Pittet, S.. Cern - European Organization for Nuclear Research; SuizaElsevier2023-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/230455Wassinger, Nicolás; Maestri, Sebastian Oscar; Garcia Retegui, Rogelio Adrian; Funes, Marcos Alan; Antoszczuk, Pablo Daniel; et al.; MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet; Elsevier; Power Electronic Devices and Components; 6; 10-2023; 1-122772-3704CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.pedc.2023.100048info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:35:03Zoai:ri.conicet.gov.ar:11336/230455instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:35:03.747CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
title |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
spellingShingle |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet Wassinger, Nicolás INNER TRIPLET MAGNETS MOSFET PARALLELIZATION THERMAL PERFORMANCE HL-LHC |
title_short |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
title_full |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
title_fullStr |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
title_full_unstemmed |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
title_sort |
MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet |
dc.creator.none.fl_str_mv |
Wassinger, Nicolás Maestri, Sebastian Oscar Garcia Retegui, Rogelio Adrian Funes, Marcos Alan Antoszczuk, Pablo Daniel Pittet, S. |
author |
Wassinger, Nicolás |
author_facet |
Wassinger, Nicolás Maestri, Sebastian Oscar Garcia Retegui, Rogelio Adrian Funes, Marcos Alan Antoszczuk, Pablo Daniel Pittet, S. |
author_role |
author |
author2 |
Maestri, Sebastian Oscar Garcia Retegui, Rogelio Adrian Funes, Marcos Alan Antoszczuk, Pablo Daniel Pittet, S. |
author2_role |
author author author author author |
dc.subject.none.fl_str_mv |
INNER TRIPLET MAGNETS MOSFET PARALLELIZATION THERMAL PERFORMANCE HL-LHC |
topic |
INNER TRIPLET MAGNETS MOSFET PARALLELIZATION THERMAL PERFORMANCE HL-LHC |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
The upgrade of the Large Hadron Collider (LHC) at CERN towards the High Luminosity-LHC (HL-LHC) presents different challenges, among them, the upgrade of the power converters associated to the inner triplet magnets to reach the required rated current of 18kA. In order to reach this current and to accomplish the stringent requirements associated to this kind of application, even under a fault scenario, redundancy and modularity are foreseen in the converter design. Consequently, the development of a 18kA/±10V power converter built from 10 parallel-connected sub-converters, each consisting of M modules, is carried out. Additionally, due to the converter being installed in an underground gallery, most of the heat must be extracted by using a water cooling system. Therefore, the reduction of power losses and an appropriate thermal design become key factors. These requirements, together with the large number of devices associated with the parallelization-based modular system, determine the choice of switching semiconductor devices as an important aspect in the design of the converter. This paper presents the process carried out for the choice of semiconductor devices based on analysis of power losses, thermal behavior and integration complexity. In this process, multiple variants in terms of semiconductor, number of modules, parallelization of devices, and switching frequency are considered. The proper operation of the selected device was verified on a 2kA sub-converter prototype based on the interconnection of 9 MOSFET based modules. Fil: Wassinger, Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina Fil: Maestri, Sebastian Oscar. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina Fil: Garcia Retegui, Rogelio Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina Fil: Funes, Marcos Alan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina Fil: Antoszczuk, Pablo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones Científicas y Tecnológicas en Electrónica; Argentina Fil: Pittet, S.. Cern - European Organization for Nuclear Research; Suiza |
description |
The upgrade of the Large Hadron Collider (LHC) at CERN towards the High Luminosity-LHC (HL-LHC) presents different challenges, among them, the upgrade of the power converters associated to the inner triplet magnets to reach the required rated current of 18kA. In order to reach this current and to accomplish the stringent requirements associated to this kind of application, even under a fault scenario, redundancy and modularity are foreseen in the converter design. Consequently, the development of a 18kA/±10V power converter built from 10 parallel-connected sub-converters, each consisting of M modules, is carried out. Additionally, due to the converter being installed in an underground gallery, most of the heat must be extracted by using a water cooling system. Therefore, the reduction of power losses and an appropriate thermal design become key factors. These requirements, together with the large number of devices associated with the parallelization-based modular system, determine the choice of switching semiconductor devices as an important aspect in the design of the converter. This paper presents the process carried out for the choice of semiconductor devices based on analysis of power losses, thermal behavior and integration complexity. In this process, multiple variants in terms of semiconductor, number of modules, parallelization of devices, and switching frequency are considered. The proper operation of the selected device was verified on a 2kA sub-converter prototype based on the interconnection of 9 MOSFET based modules. |
publishDate |
2023 |
dc.date.none.fl_str_mv |
2023-10 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/230455 Wassinger, Nicolás; Maestri, Sebastian Oscar; Garcia Retegui, Rogelio Adrian; Funes, Marcos Alan; Antoszczuk, Pablo Daniel; et al.; MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet; Elsevier; Power Electronic Devices and Components; 6; 10-2023; 1-12 2772-3704 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/230455 |
identifier_str_mv |
Wassinger, Nicolás; Maestri, Sebastian Oscar; Garcia Retegui, Rogelio Adrian; Funes, Marcos Alan; Antoszczuk, Pablo Daniel; et al.; MOSFET Selection for a 18ka modular power converter for HL-LHC inner triplet; Elsevier; Power Electronic Devices and Components; 6; 10-2023; 1-12 2772-3704 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.pedc.2023.100048 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-nd/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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