A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition

Autores
Marchi, M.C.; Bilmes, S.A.; Ribeiro, C.T.M.; Ochoa, E.A.; Kleinke, M.; Alvarez, F.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.
Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fuente
J Appl Phys 2010;108(6)
Materia
Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by/2.5/ar
Repositorio
Biblioteca Digital (UBA-FCEN)
Institución
Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
OAI Identificador
paperaa:paper_00218979_v108_n6_p_Marchi
Acceder
id BDUBAFCEN_d2c526bffa7e9c48e79257db26952ea9
oai_identifier_str paperaa:paper_00218979_v108_n6_p_Marchi
network_acronym_str BDUBAFCEN
repository_id_str 1896
network_name_str Biblioteca Digital (UBA-FCEN)
spelling A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam depositionMarchi, M.C.Bilmes, S.A.Ribeiro, C.T.M.Ochoa, E.A.Kleinke, M.Alvarez, F.Abrupt transitionComprehensive studiesCrystal structure and morphologyEnergy minimizationInfluence of oxygenIon beam depositionIon beam deposition techniqueNon-stoichiometryTiOTitanium oxide thin filmsWide-gap semiconductorX-ray photoelectronsAtomic force microscopyAtomic spectroscopyChemical modificationCoalescenceCrystal structureFourier transform infrared spectroscopyFourier transformsIon beamsOxide filmsOxygenPhotoelectron spectroscopyPhysical propertiesStoichiometryTitaniumTitanium oxidesFilm preparationA comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.2010info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttp://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_MarchiJ Appl Phys 2010;108(6)reponame:Biblioteca Digital (UBA-FCEN)instname:Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturalesinstacron:UBA-FCENenginfo:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/2.5/ar2025-09-04T09:48:42Zpaperaa:paper_00218979_v108_n6_p_MarchiInstitucionalhttps://digital.bl.fcen.uba.ar/Universidad públicaNo correspondehttps://digital.bl.fcen.uba.ar/cgi-bin/oaiserver.cgiana@bl.fcen.uba.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:18962025-09-04 09:48:43.283Biblioteca Digital (UBA-FCEN) - Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturalesfalse
dc.title.none.fl_str_mv A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
spellingShingle A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
Marchi, M.C.
Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
title_short A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_full A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_fullStr A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_full_unstemmed A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_sort A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
dc.creator.none.fl_str_mv Marchi, M.C.
Bilmes, S.A.
Ribeiro, C.T.M.
Ochoa, E.A.
Kleinke, M.
Alvarez, F.
author Marchi, M.C.
author_facet Marchi, M.C.
Bilmes, S.A.
Ribeiro, C.T.M.
Ochoa, E.A.
Kleinke, M.
Alvarez, F.
author_role author
author2 Bilmes, S.A.
Ribeiro, C.T.M.
Ochoa, E.A.
Kleinke, M.
Alvarez, F.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
topic Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
dc.description.none.fl_txt_mv A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.
Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
description A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.
publishDate 2010
dc.date.none.fl_str_mv 2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
url http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/2.5/ar
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/2.5/ar
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv J Appl Phys 2010;108(6)
reponame:Biblioteca Digital (UBA-FCEN)
instname:Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
instacron:UBA-FCEN
reponame_str Biblioteca Digital (UBA-FCEN)
collection Biblioteca Digital (UBA-FCEN)
instname_str Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
instacron_str UBA-FCEN
institution UBA-FCEN
repository.name.fl_str_mv Biblioteca Digital (UBA-FCEN) - Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
repository.mail.fl_str_mv ana@bl.fcen.uba.ar
_version_ 1842340706718318592
score 12.623145

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