Adaptive threshold in TiO2-based synapses

Autores
Ghenzi, N.; Barella, M.; Rubi, D.; Acha, C.
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión aceptada
Descripción
Fil: Ghenzi, N. Comisión Nacional de Energía Atómica; Argentina
Fil: Barella, M. Pontificia Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina
Fil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Ghenzi, N. Pontificia Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina
Fil: Barella, M. Instituto Nacional de Tecnología Industrial; Argentina
Fil: Rubi, D. Comisión Nacional de Energía Atómica; Argentina
Fil: Rubi, D. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Acha, C. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina
Abstract: We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO2/Au and Ni/TiO2/Ni/Au memory devices in order to understand the conduction mechanisms and their synapselike memory properties. Current levels and switching threshold voltages are strongly affected by the metal used for the electrode. We propose a non-trivial circuit model which captures in detail the currentvoltage response of both kinds of devices. We found that, for the former device, the voltage threshold can be maintained constant, independently of the applied voltage history, while for the latter, a limiting resistor controls the threshold voltages behavior, being the origin of their dependence on the resistance value previous to the switching. The identification of the conduction mechanisms across the device allows optimizing the memristor performance and determining the best electrode choice to improve the device synapse-emulation abilities.
Fuente
Applied Physics. 2019, 52 (12)
Materia
COMPUTACION
SINAPSIS
MEMORIA
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/4.0/
Repositorio
Repositorio Institucional (UCA)
Institución
Pontificia Universidad Católica Argentina
OAI Identificador
oai:ucacris:123456789/14709
Acceder
id RIUCA_8bae0137eb3609c63ef26e7b664fea3a
oai_identifier_str oai:ucacris:123456789/14709
network_acronym_str RIUCA
repository_id_str 2585
network_name_str Repositorio Institucional (UCA)
spelling Adaptive threshold in TiO2-based synapsesGhenzi, N.Barella, M.Rubi, D.Acha, C.COMPUTACIONSINAPSISMEMORIAFil: Ghenzi, N. Comisión Nacional de Energía Atómica; ArgentinaFil: Barella, M. Pontificia Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; ArgentinaFil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Ghenzi, N. Pontificia Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; ArgentinaFil: Barella, M. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Rubi, D. Comisión Nacional de Energía Atómica; ArgentinaFil: Rubi, D. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Acha, C. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; ArgentinaAbstract: We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO2/Au and Ni/TiO2/Ni/Au memory devices in order to understand the conduction mechanisms and their synapselike memory properties. Current levels and switching threshold voltages are strongly affected by the metal used for the electrode. We propose a non-trivial circuit model which captures in detail the currentvoltage response of both kinds of devices. We found that, for the former device, the voltage threshold can be maintained constant, independently of the applied voltage history, while for the latter, a limiting resistor controls the threshold voltages behavior, being the origin of their dependence on the resistance value previous to the switching. The identification of the conduction mechanisms across the device allows optimizing the memristor performance and determining the best electrode choice to improve the device synapse-emulation abilities.IOP Publishing2019info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttps://repositorio.uca.edu.ar/handle/123456789/147090022-37271361-6463 (online)10.1088/1361-6463/aafdf3Ghenzi, N. et al. Adaptive threshold in TiO2-based synapses [en línea]. Journal of Physics D: Applied Physics. 2019, 52 (12). Disponible en: https://repositorio.uca.edu.ar/handle/123456789/14709Applied Physics. 2019, 52 (12)reponame:Repositorio Institucional (UCA)instname:Pontificia Universidad Católica Argentinaenginfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/4.0/2025-07-03T10:58:45Zoai:ucacris:123456789/14709instacron:UCAInstitucionalhttps://repositorio.uca.edu.ar/Universidad privadaNo correspondehttps://repositorio.uca.edu.ar/oaiclaudia_fernandez@uca.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:25852025-07-03 10:58:45.496Repositorio Institucional (UCA) - Pontificia Universidad Católica Argentinafalse
dc.title.none.fl_str_mv Adaptive threshold in TiO2-based synapses
title Adaptive threshold in TiO2-based synapses
spellingShingle Adaptive threshold in TiO2-based synapses
Ghenzi, N.
COMPUTACION
SINAPSIS
MEMORIA
title_short Adaptive threshold in TiO2-based synapses
title_full Adaptive threshold in TiO2-based synapses
title_fullStr Adaptive threshold in TiO2-based synapses
title_full_unstemmed Adaptive threshold in TiO2-based synapses
title_sort Adaptive threshold in TiO2-based synapses
dc.creator.none.fl_str_mv Ghenzi, N.
Barella, M.
Rubi, D.
Acha, C.
author Ghenzi, N.
author_facet Ghenzi, N.
Barella, M.
Rubi, D.
Acha, C.
author_role author
author2 Barella, M.
Rubi, D.
Acha, C.
author2_role author
author
author
dc.subject.none.fl_str_mv COMPUTACION
SINAPSIS
MEMORIA
topic COMPUTACION
SINAPSIS
MEMORIA
dc.description.none.fl_txt_mv Fil: Ghenzi, N. Comisión Nacional de Energía Atómica; Argentina
Fil: Barella, M. Pontificia Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina
Fil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Ghenzi, N. Pontificia Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina
Fil: Barella, M. Instituto Nacional de Tecnología Industrial; Argentina
Fil: Rubi, D. Comisión Nacional de Energía Atómica; Argentina
Fil: Rubi, D. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Acha, C. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina
Abstract: We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO2/Au and Ni/TiO2/Ni/Au memory devices in order to understand the conduction mechanisms and their synapselike memory properties. Current levels and switching threshold voltages are strongly affected by the metal used for the electrode. We propose a non-trivial circuit model which captures in detail the currentvoltage response of both kinds of devices. We found that, for the former device, the voltage threshold can be maintained constant, independently of the applied voltage history, while for the latter, a limiting resistor controls the threshold voltages behavior, being the origin of their dependence on the resistance value previous to the switching. The identification of the conduction mechanisms across the device allows optimizing the memristor performance and determining the best electrode choice to improve the device synapse-emulation abilities.
description Fil: Ghenzi, N. Comisión Nacional de Energía Atómica; Argentina
publishDate 2019
dc.date.none.fl_str_mv 2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://repositorio.uca.edu.ar/handle/123456789/14709
0022-3727
1361-6463 (online)
10.1088/1361-6463/aafdf3
Ghenzi, N. et al. Adaptive threshold in TiO2-based synapses [en línea]. Journal of Physics D: Applied Physics. 2019, 52 (12). Disponible en: https://repositorio.uca.edu.ar/handle/123456789/14709
url https://repositorio.uca.edu.ar/handle/123456789/14709
identifier_str_mv 0022-3727
1361-6463 (online)
10.1088/1361-6463/aafdf3
Ghenzi, N. et al. Adaptive threshold in TiO2-based synapses [en línea]. Journal of Physics D: Applied Physics. 2019, 52 (12). Disponible en: https://repositorio.uca.edu.ar/handle/123456789/14709
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv Applied Physics. 2019, 52 (12)
reponame:Repositorio Institucional (UCA)
instname:Pontificia Universidad Católica Argentina
reponame_str Repositorio Institucional (UCA)
collection Repositorio Institucional (UCA)
instname_str Pontificia Universidad Católica Argentina
repository.name.fl_str_mv Repositorio Institucional (UCA) - Pontificia Universidad Católica Argentina
repository.mail.fl_str_mv claudia_fernandez@uca.edu.ar
_version_ 1836638364015525888
score 13.070432

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