Cita APA

Alcalde Bessia, F., Flandre, D., André, N., Irazoqui, J., Pérez, M., Gómez Berisso, M., & Lipovetzky, J. (2019). Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application. Web

Citación estilo Chicago

Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. Ultra Low Power Ionizing Dose Sensor Based On Complementary Fully Depleted MOS Transistors for Radiotherapy Application. 2019.

Cita MLA

Alcalde Bessia, F., et al. Ultra Low Power Ionizing Dose Sensor Based On Complementary Fully Depleted MOS Transistors for Radiotherapy Application. 2019.