Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures

Autores
Roman Acevedo, Wilson Stibens; Acha, Carlos Enrique; Sánchez, María José; Levy, Pablo Eduardo; Rubi, Diego
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices.We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, inaddition to the usual high and low resistance states that are observed in the standard voltagecontrolled experiments. Based on thorough electrical characterization (impedance spectroscopy,current-voltage curves analysis), we disclose the contribution of three different microscopic regionsof the device to the transport properties: an ohmic incomplete metallic filament, a thin manganitelayer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with anelectrical response well characterized by a Child-Langmuir law. Our results suggest that the existenceof the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicatingthat the combination of two or more active resistive switching oxides adds functionalities inrelation to the single-oxide devices. We understand that these multilevel devices are interesting andpromising, as their fabrication procedure is rather simple and they are fully compatible with thestandard Si-based electronics.
Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Sánchez, María José. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Materia
Memorias resistivas
Mecanismos de conducción
Heteroestructuras
Dispositivos
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/66267
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/66267
network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructuresRoman Acevedo, Wilson StibensAcha, Carlos EnriqueSánchez, María JoséLevy, Pablo EduardoRubi, DiegoMemorias resistivasMecanismos de conducciónHeteroestructurasDispositivoshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices.We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, inaddition to the usual high and low resistance states that are observed in the standard voltagecontrolled experiments. Based on thorough electrical characterization (impedance spectroscopy,current-voltage curves analysis), we disclose the contribution of three different microscopic regionsof the device to the transport properties: an ohmic incomplete metallic filament, a thin manganitelayer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with anelectrical response well characterized by a Child-Langmuir law. Our results suggest that the existenceof the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicatingthat the combination of two or more active resistive switching oxides adds functionalities inrelation to the single-oxide devices. We understand that these multilevel devices are interesting andpromising, as their fabrication procedure is rather simple and they are fully compatible with thestandard Si-based electronics.Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Sánchez, María José. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaAmerican Institute of Physics2017-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/66267Roman Acevedo, Wilson Stibens; Acha, Carlos Enrique; Sánchez, María José; Levy, Pablo Eduardo; Rubi, Diego; Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures; American Institute of Physics; Applied Physics Letters; 110; 5; 1-2017; 535011-5350150003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4975157info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4975157info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-17T11:11:48Zoai:ri.conicet.gov.ar:11336/66267instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-17 11:11:48.845CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
title Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
spellingShingle Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
Roman Acevedo, Wilson Stibens
Memorias resistivas
Mecanismos de conducción
Heteroestructuras
Dispositivos
title_short Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
title_full Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
title_fullStr Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
title_full_unstemmed Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
title_sort Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures
dc.creator.none.fl_str_mv Roman Acevedo, Wilson Stibens
Acha, Carlos Enrique
Sánchez, María José
Levy, Pablo Eduardo
Rubi, Diego
author Roman Acevedo, Wilson Stibens
author_facet Roman Acevedo, Wilson Stibens
Acha, Carlos Enrique
Sánchez, María José
Levy, Pablo Eduardo
Rubi, Diego
author_role author
author2 Acha, Carlos Enrique
Sánchez, María José
Levy, Pablo Eduardo
Rubi, Diego
author2_role author
author
author
author
dc.subject.none.fl_str_mv Memorias resistivas
Mecanismos de conducción
Heteroestructuras
Dispositivos
topic Memorias resistivas
Mecanismos de conducción
Heteroestructuras
Dispositivos
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices.We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, inaddition to the usual high and low resistance states that are observed in the standard voltagecontrolled experiments. Based on thorough electrical characterization (impedance spectroscopy,current-voltage curves analysis), we disclose the contribution of three different microscopic regionsof the device to the transport properties: an ohmic incomplete metallic filament, a thin manganitelayer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with anelectrical response well characterized by a Child-Langmuir law. Our results suggest that the existenceof the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicatingthat the combination of two or more active resistive switching oxides adds functionalities inrelation to the single-oxide devices. We understand that these multilevel devices are interesting andpromising, as their fabrication procedure is rather simple and they are fully compatible with thestandard Si-based electronics.
Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Sánchez, María José. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
description We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices.We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, inaddition to the usual high and low resistance states that are observed in the standard voltagecontrolled experiments. Based on thorough electrical characterization (impedance spectroscopy,current-voltage curves analysis), we disclose the contribution of three different microscopic regionsof the device to the transport properties: an ohmic incomplete metallic filament, a thin manganitelayer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with anelectrical response well characterized by a Child-Langmuir law. Our results suggest that the existenceof the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicatingthat the combination of two or more active resistive switching oxides adds functionalities inrelation to the single-oxide devices. We understand that these multilevel devices are interesting andpromising, as their fabrication procedure is rather simple and they are fully compatible with thestandard Si-based electronics.
publishDate 2017
dc.date.none.fl_str_mv 2017-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/66267
Roman Acevedo, Wilson Stibens; Acha, Carlos Enrique; Sánchez, María José; Levy, Pablo Eduardo; Rubi, Diego; Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures; American Institute of Physics; Applied Physics Letters; 110; 5; 1-2017; 535011-535015
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/66267
identifier_str_mv Roman Acevedo, Wilson Stibens; Acha, Carlos Enrique; Sánchez, María José; Levy, Pablo Eduardo; Rubi, Diego; Origin of multistate resistive switching in Ti/manganite/SiO x /Si heterostructures; American Institute of Physics; Applied Physics Letters; 110; 5; 1-2017; 535011-535015
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4975157
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4975157
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.001348

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