Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature
- Autores
- Helman, C.; Camjayi, Alberto; Islam, E.; Akabori, M.; Thevenard, L.; Gourdon, C.; Tortarolo, Marina del Carmen
- Año de publicación
- 2021
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior of the Hall resistivity with longitudinal resistivity, characteristic of scattering-independent processes, thus enabling the comparison with our ab initio calculations. The calculated Berry phase contribution to the AHE is in quantitative agreement with the measured AHE in these epilayers. Moreover, the predicted anisotropic dependence of the experimental AHE on the magnetization is well reproduced.
Fil: Helman, C.. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Islam, E.. Cnmt - Jaist; Japón
Fil: Akabori, M.. Center For Nano Materials And Technology - Jaist; Japón
Fil: Thevenard, L.. Sorbonne University; Francia
Fil: Gourdon, C.. Sorbonne University; Francia
Fil: Tortarolo, Marina del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Constituyentes | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Constituyentes; Argentina - Materia
-
MnAs
BERRY
CURVATURE
HALL - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/181295
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Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvatureHelman, C.Camjayi, AlbertoIslam, E.Akabori, M.Thevenard, L.Gourdon, C.Tortarolo, Marina del CarmenMnAsBERRYCURVATUREHALLhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior of the Hall resistivity with longitudinal resistivity, characteristic of scattering-independent processes, thus enabling the comparison with our ab initio calculations. The calculated Berry phase contribution to the AHE is in quantitative agreement with the measured AHE in these epilayers. Moreover, the predicted anisotropic dependence of the experimental AHE on the magnetization is well reproduced.Fil: Helman, C.. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Islam, E.. Cnmt - Jaist; JapónFil: Akabori, M.. Center For Nano Materials And Technology - Jaist; JapónFil: Thevenard, L.. Sorbonne University; FranciaFil: Gourdon, C.. Sorbonne University; FranciaFil: Tortarolo, Marina del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Constituyentes | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Constituyentes; ArgentinaAmerican Physical Society2021-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/181295Helman, C.; Camjayi, Alberto; Islam, E.; Akabori, M.; Thevenard, L.; et al.; Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 103; 13; 4-2021; 1-61098-01212469-9969CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.134408info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.103.134408info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:08:01Zoai:ri.conicet.gov.ar:11336/181295instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:08:01.625CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
title |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
spellingShingle |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature Helman, C. MnAs BERRY CURVATURE HALL |
title_short |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
title_full |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
title_fullStr |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
title_full_unstemmed |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
title_sort |
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature |
dc.creator.none.fl_str_mv |
Helman, C. Camjayi, Alberto Islam, E. Akabori, M. Thevenard, L. Gourdon, C. Tortarolo, Marina del Carmen |
author |
Helman, C. |
author_facet |
Helman, C. Camjayi, Alberto Islam, E. Akabori, M. Thevenard, L. Gourdon, C. Tortarolo, Marina del Carmen |
author_role |
author |
author2 |
Camjayi, Alberto Islam, E. Akabori, M. Thevenard, L. Gourdon, C. Tortarolo, Marina del Carmen |
author2_role |
author author author author author author |
dc.subject.none.fl_str_mv |
MnAs BERRY CURVATURE HALL |
topic |
MnAs BERRY CURVATURE HALL |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior of the Hall resistivity with longitudinal resistivity, characteristic of scattering-independent processes, thus enabling the comparison with our ab initio calculations. The calculated Berry phase contribution to the AHE is in quantitative agreement with the measured AHE in these epilayers. Moreover, the predicted anisotropic dependence of the experimental AHE on the magnetization is well reproduced. Fil: Helman, C.. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina Fil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina Fil: Islam, E.. Cnmt - Jaist; Japón Fil: Akabori, M.. Center For Nano Materials And Technology - Jaist; Japón Fil: Thevenard, L.. Sorbonne University; Francia Fil: Gourdon, C.. Sorbonne University; Francia Fil: Tortarolo, Marina del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Constituyentes | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Constituyentes; Argentina |
description |
We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior of the Hall resistivity with longitudinal resistivity, characteristic of scattering-independent processes, thus enabling the comparison with our ab initio calculations. The calculated Berry phase contribution to the AHE is in quantitative agreement with the measured AHE in these epilayers. Moreover, the predicted anisotropic dependence of the experimental AHE on the magnetization is well reproduced. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-04 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/181295 Helman, C.; Camjayi, Alberto; Islam, E.; Akabori, M.; Thevenard, L.; et al.; Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 103; 13; 4-2021; 1-6 1098-0121 2469-9969 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/181295 |
identifier_str_mv |
Helman, C.; Camjayi, Alberto; Islam, E.; Akabori, M.; Thevenard, L.; et al.; Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 103; 13; 4-2021; 1-6 1098-0121 2469-9969 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.134408 info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.103.134408 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Physical Society |
publisher.none.fl_str_mv |
American Physical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1842270027960549376 |
score |
13.13397 |