Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces

Autores
Miron, Dror; Cohen Azarzar, Dana; Segev, Noa; Baskin, Maria; Palumbo, Félix Roberto Mario; Yalon, Eilam; Kornblum, Lior
Año de publicación
2020
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Resistive switching devices promise significant progress in memory and logic technologies. One of the hurdles toward their practical realization is the high forming voltages required for their initial activation, which may be incompatible with standard microelectronic architectures. This work studies the conduction mechanisms of Ta2O5 layers, one of the most studied materials for memristive devices, in their initial, as-fabricated state (“pre-forming”). By separating this aspect and resolving the current mechanisms, we provide the input that may guide future design of resistive switching devices. For this purpose, Ta2O5 layers were sputtered on conductive Nb:SrTiO3 substrates. Ta2O5/Nb:SrTiO3 structures exhibit diode behavior with an ideality factor of n ≈ 1.3 over four current decades. X-ray photoelectron spectroscopy analysis of the interfacial band offsets reveals a barrier of 1.3 ± 0.3 eV for electrons injected from the semiconductor into Ta2O5. Temperature-dependent current–voltage analysis exhibits rectifying behavior. While several conduction mechanisms produce good fits to the data, comparing the physical parameters of these models to the expected physical parameters led us to conclude that trap-assisted tunneling (TAT) is the most likely conduction mechanism. Fitting the data using a recent TAT model and with the barrier that was measured by spectroscopy fully captures the temperature dependence, further validating this conduction mechanism.
Fil: Miron, Dror. Technion - Israel Institute of Technology; Israel
Fil: Cohen Azarzar, Dana. Technion - Israel Institute of Technology; Israel
Fil: Segev, Noa. Technion - Israel Institute of Technology; Israel
Fil: Baskin, Maria. Technion - Israel Institute of Technology; Israel
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Yalon, Eilam. Technion - Israel Institute of Technology; Israel
Fil: Kornblum, Lior. Technion - Israel Institute of Technology; Israel
Materia
STO
BAND STRUCTURE
STO INTERFACES
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/169178
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfacesMiron, DrorCohen Azarzar, DanaSegev, NoaBaskin, MariaPalumbo, Félix Roberto MarioYalon, EilamKornblum, LiorSTOBAND STRUCTURESTO INTERFACEShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Resistive switching devices promise significant progress in memory and logic technologies. One of the hurdles toward their practical realization is the high forming voltages required for their initial activation, which may be incompatible with standard microelectronic architectures. This work studies the conduction mechanisms of Ta2O5 layers, one of the most studied materials for memristive devices, in their initial, as-fabricated state (“pre-forming”). By separating this aspect and resolving the current mechanisms, we provide the input that may guide future design of resistive switching devices. For this purpose, Ta2O5 layers were sputtered on conductive Nb:SrTiO3 substrates. Ta2O5/Nb:SrTiO3 structures exhibit diode behavior with an ideality factor of n ≈ 1.3 over four current decades. X-ray photoelectron spectroscopy analysis of the interfacial band offsets reveals a barrier of 1.3 ± 0.3 eV for electrons injected from the semiconductor into Ta2O5. Temperature-dependent current–voltage analysis exhibits rectifying behavior. While several conduction mechanisms produce good fits to the data, comparing the physical parameters of these models to the expected physical parameters led us to conclude that trap-assisted tunneling (TAT) is the most likely conduction mechanism. Fitting the data using a recent TAT model and with the barrier that was measured by spectroscopy fully captures the temperature dependence, further validating this conduction mechanism.Fil: Miron, Dror. Technion - Israel Institute of Technology; IsraelFil: Cohen Azarzar, Dana. Technion - Israel Institute of Technology; IsraelFil: Segev, Noa. Technion - Israel Institute of Technology; IsraelFil: Baskin, Maria. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Yalon, Eilam. Technion - Israel Institute of Technology; IsraelFil: Kornblum, Lior. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2020-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/169178Miron, Dror; Cohen Azarzar, Dana; Segev, Noa; Baskin, Maria; Palumbo, Félix Roberto Mario; et al.; Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces; American Institute of Physics; Journal of Applied Physics; 128; 4; 7-2020; 1-160021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5139533info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5139533info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-04-15T10:45:31Zoai:ri.conicet.gov.ar:11336/169178instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-04-15 10:45:31.992CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
title Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
spellingShingle Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
Miron, Dror
STO
BAND STRUCTURE
STO INTERFACES
title_short Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
title_full Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
title_fullStr Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
title_full_unstemmed Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
title_sort Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces
dc.creator.none.fl_str_mv Miron, Dror
Cohen Azarzar, Dana
Segev, Noa
Baskin, Maria
Palumbo, Félix Roberto Mario
Yalon, Eilam
Kornblum, Lior
author Miron, Dror
author_facet Miron, Dror
Cohen Azarzar, Dana
Segev, Noa
Baskin, Maria
Palumbo, Félix Roberto Mario
Yalon, Eilam
Kornblum, Lior
author_role author
author2 Cohen Azarzar, Dana
Segev, Noa
Baskin, Maria
Palumbo, Félix Roberto Mario
Yalon, Eilam
Kornblum, Lior
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv STO
BAND STRUCTURE
STO INTERFACES
topic STO
BAND STRUCTURE
STO INTERFACES
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Resistive switching devices promise significant progress in memory and logic technologies. One of the hurdles toward their practical realization is the high forming voltages required for their initial activation, which may be incompatible with standard microelectronic architectures. This work studies the conduction mechanisms of Ta2O5 layers, one of the most studied materials for memristive devices, in their initial, as-fabricated state (“pre-forming”). By separating this aspect and resolving the current mechanisms, we provide the input that may guide future design of resistive switching devices. For this purpose, Ta2O5 layers were sputtered on conductive Nb:SrTiO3 substrates. Ta2O5/Nb:SrTiO3 structures exhibit diode behavior with an ideality factor of n ≈ 1.3 over four current decades. X-ray photoelectron spectroscopy analysis of the interfacial band offsets reveals a barrier of 1.3 ± 0.3 eV for electrons injected from the semiconductor into Ta2O5. Temperature-dependent current–voltage analysis exhibits rectifying behavior. While several conduction mechanisms produce good fits to the data, comparing the physical parameters of these models to the expected physical parameters led us to conclude that trap-assisted tunneling (TAT) is the most likely conduction mechanism. Fitting the data using a recent TAT model and with the barrier that was measured by spectroscopy fully captures the temperature dependence, further validating this conduction mechanism.
Fil: Miron, Dror. Technion - Israel Institute of Technology; Israel
Fil: Cohen Azarzar, Dana. Technion - Israel Institute of Technology; Israel
Fil: Segev, Noa. Technion - Israel Institute of Technology; Israel
Fil: Baskin, Maria. Technion - Israel Institute of Technology; Israel
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Yalon, Eilam. Technion - Israel Institute of Technology; Israel
Fil: Kornblum, Lior. Technion - Israel Institute of Technology; Israel
description Resistive switching devices promise significant progress in memory and logic technologies. One of the hurdles toward their practical realization is the high forming voltages required for their initial activation, which may be incompatible with standard microelectronic architectures. This work studies the conduction mechanisms of Ta2O5 layers, one of the most studied materials for memristive devices, in their initial, as-fabricated state (“pre-forming”). By separating this aspect and resolving the current mechanisms, we provide the input that may guide future design of resistive switching devices. For this purpose, Ta2O5 layers were sputtered on conductive Nb:SrTiO3 substrates. Ta2O5/Nb:SrTiO3 structures exhibit diode behavior with an ideality factor of n ≈ 1.3 over four current decades. X-ray photoelectron spectroscopy analysis of the interfacial band offsets reveals a barrier of 1.3 ± 0.3 eV for electrons injected from the semiconductor into Ta2O5. Temperature-dependent current–voltage analysis exhibits rectifying behavior. While several conduction mechanisms produce good fits to the data, comparing the physical parameters of these models to the expected physical parameters led us to conclude that trap-assisted tunneling (TAT) is the most likely conduction mechanism. Fitting the data using a recent TAT model and with the barrier that was measured by spectroscopy fully captures the temperature dependence, further validating this conduction mechanism.
publishDate 2020
dc.date.none.fl_str_mv 2020-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/169178
Miron, Dror; Cohen Azarzar, Dana; Segev, Noa; Baskin, Maria; Palumbo, Félix Roberto Mario; et al.; Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces; American Institute of Physics; Journal of Applied Physics; 128; 4; 7-2020; 1-16
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/169178
identifier_str_mv Miron, Dror; Cohen Azarzar, Dana; Segev, Noa; Baskin, Maria; Palumbo, Félix Roberto Mario; et al.; Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces; American Institute of Physics; Journal of Applied Physics; 128; 4; 7-2020; 1-16
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5139533
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5139533
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.203462

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