Location site of lanthanides in ZnO

Autores
Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region.
Fil: Otal, Eugenio Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Walsoe de Reca, N. E.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
Zno
Lanthanides
Xafs
Xrd
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/101462
Acceder
id CONICETDig_ab97394576a95c45294d6b351551a13b
oai_identifier_str oai:ri.conicet.gov.ar:11336/101462
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Location site of lanthanides in ZnOOtal, Eugenio HernanCanepa, Horacio RicardoWalsoe, Noemi ElizabethZnoLanthanidesXafsXrdhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region.Fil: Otal, Eugenio Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Walsoe de Reca, N. E.. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaBrazilian Synchrotron Light Laboratory2009-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/101462Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Location site of lanthanides in ZnO; Brazilian Synchrotron Light Laboratory; Activity Report 2008; 2008; 6-2009; 1-21518-0204CONICET DigitalCONICETenginfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:24:33Zoai:ri.conicet.gov.ar:11336/101462instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:24:33.375CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Location site of lanthanides in ZnO
title Location site of lanthanides in ZnO
spellingShingle Location site of lanthanides in ZnO
Otal, Eugenio Hernan
Zno
Lanthanides
Xafs
Xrd
title_short Location site of lanthanides in ZnO
title_full Location site of lanthanides in ZnO
title_fullStr Location site of lanthanides in ZnO
title_full_unstemmed Location site of lanthanides in ZnO
title_sort Location site of lanthanides in ZnO
dc.creator.none.fl_str_mv Otal, Eugenio Hernan
Canepa, Horacio Ricardo
Walsoe, Noemi Elizabeth
author Otal, Eugenio Hernan
author_facet Otal, Eugenio Hernan
Canepa, Horacio Ricardo
Walsoe, Noemi Elizabeth
author_role author
author2 Canepa, Horacio Ricardo
Walsoe, Noemi Elizabeth
author2_role author
author
dc.subject.none.fl_str_mv Zno
Lanthanides
Xafs
Xrd
topic Zno
Lanthanides
Xafs
Xrd
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region.
Fil: Otal, Eugenio Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Walsoe de Reca, N. E.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region.
publishDate 2009
dc.date.none.fl_str_mv 2009-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/101462
Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Location site of lanthanides in ZnO; Brazilian Synchrotron Light Laboratory; Activity Report 2008; 2008; 6-2009; 1-2
1518-0204
CONICET Digital
CONICET
url http://hdl.handle.net/11336/101462
identifier_str_mv Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Location site of lanthanides in ZnO; Brazilian Synchrotron Light Laboratory; Activity Report 2008; 2008; 6-2009; 1-2
1518-0204
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Brazilian Synchrotron Light Laboratory
publisher.none.fl_str_mv Brazilian Synchrotron Light Laboratory
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846083392041385984
score 13.22299

Publicaciones similares