Location site of lanthanides in ZnO
- Autores
- Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth
- Año de publicación
- 2009
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region.
Fil: Otal, Eugenio Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Walsoe de Reca, N. E.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina - Materia
-
Zno
Lanthanides
Xafs
Xrd - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/101462
Ver los metadatos del registro completo
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Location site of lanthanides in ZnOOtal, Eugenio HernanCanepa, Horacio RicardoWalsoe, Noemi ElizabethZnoLanthanidesXafsXrdhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region.Fil: Otal, Eugenio Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Walsoe de Reca, N. E.. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaBrazilian Synchrotron Light Laboratory2009-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/101462Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Location site of lanthanides in ZnO; Brazilian Synchrotron Light Laboratory; Activity Report 2008; 2008; 6-2009; 1-21518-0204CONICET DigitalCONICETenginfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:27:36Zoai:ri.conicet.gov.ar:11336/101462instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:27:36.697CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Location site of lanthanides in ZnO |
title |
Location site of lanthanides in ZnO |
spellingShingle |
Location site of lanthanides in ZnO Otal, Eugenio Hernan Zno Lanthanides Xafs Xrd |
title_short |
Location site of lanthanides in ZnO |
title_full |
Location site of lanthanides in ZnO |
title_fullStr |
Location site of lanthanides in ZnO |
title_full_unstemmed |
Location site of lanthanides in ZnO |
title_sort |
Location site of lanthanides in ZnO |
dc.creator.none.fl_str_mv |
Otal, Eugenio Hernan Canepa, Horacio Ricardo Walsoe, Noemi Elizabeth |
author |
Otal, Eugenio Hernan |
author_facet |
Otal, Eugenio Hernan Canepa, Horacio Ricardo Walsoe, Noemi Elizabeth |
author_role |
author |
author2 |
Canepa, Horacio Ricardo Walsoe, Noemi Elizabeth |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Zno Lanthanides Xafs Xrd |
topic |
Zno Lanthanides Xafs Xrd |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.10 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region. Fil: Otal, Eugenio Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Walsoe de Reca, N. E.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina |
description |
Zinc oxide (ZnO) is a well-known wide-band-gap semiconductor material which has applications in UV light emitters [1], ozone sensors [2], cold field electron emitters [3], transparent electrodes[4], and piezoelectric devices[5]. Otherwise rare earth doped nanometric materials adquired an increased interest in the field of optical communication, phosphors, photonic crystals and displays. Recently, erbiumdoped ZnO has demonstrated to be a promising material in optical telecommunication applications. Erbium-doped ZnO has been prepared by laser ablation [6], ion implantation [7], electrochemical precipitation [8] and e-beam evaporation [9], In this project soft chemistry routes [10], were used to obtain nanocristalline ZnO with erbium as doping element. As properties of doped materials depend on location site of the doping element in host structure, EXAFS measurements were performed in order to obtain this information. Coordination number and neighbors distance can be determined by modeling and fitting of EXAFS signal, whereas site symmetry can be determined by the analysis of the XANES region. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-06 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/101462 Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Location site of lanthanides in ZnO; Brazilian Synchrotron Light Laboratory; Activity Report 2008; 2008; 6-2009; 1-2 1518-0204 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/101462 |
identifier_str_mv |
Otal, Eugenio Hernan; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Location site of lanthanides in ZnO; Brazilian Synchrotron Light Laboratory; Activity Report 2008; 2008; 6-2009; 1-2 1518-0204 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Brazilian Synchrotron Light Laboratory |
publisher.none.fl_str_mv |
Brazilian Synchrotron Light Laboratory |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844614278433210368 |
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13.070432 |