Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Autores
Gorchon, J.; Curiale, Carlos Javier; Lemaître, A.; Moisan, N.; Cubukcu, M.; Malinowski, G.; Ulysse, C.; Faini, G.; Von Bardeleben, H.J.; Jeudy, V.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
Fil: Gorchon, J.. Universite Paris Sud; Francia
Fil: Curiale, Carlos Javier. Universite Paris Sud; Francia. Laboratoire de Photonique et de Nanostructures; Francia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comision Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Bariloche). División Resonancias Magnéticas; Argentina
Fil: Lemaître, A.. Laboratoire de Photonique et de Nanostructures; Francia
Fil: Moisan, N.. Universite Paris Sud; Francia
Fil: Cubukcu, M.. Universite Pierre et Marie Curie; Francia
Fil: Malinowski, G.. Universite Paris Sud; Francia
Fil: Ulysse, C.. Laboratoire de Photonique et de Nanostructures; Francia
Fil: Faini, G.. Laboratoire de Photonique et de Nanostructures; Francia
Fil: Von Bardeleben, H.J.. Universite Pierre et Marie Curie; Francia
Fil: Jeudy, V.. Universite Paris Sud; Francia. Université Cergy-Pontoise; Francia
Materia
Spin Accumulation
Domain Wall Dynamics
Ferromagnetic Semiconductors
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/27543
Acceder
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic LayerGorchon, J.Curiale, Carlos JavierLemaître, A.Moisan, N.Cubukcu, M.Malinowski, G.Ulysse, C.Faini, G.Von Bardeleben, H.J.Jeudy, V.Spin AccumulationDomain Wall DynamicsFerromagnetic Semiconductorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1https://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.Fil: Gorchon, J.. Universite Paris Sud; FranciaFil: Curiale, Carlos Javier. Universite Paris Sud; Francia. Laboratoire de Photonique et de Nanostructures; Francia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comision Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Bariloche). División Resonancias Magnéticas; ArgentinaFil: Lemaître, A.. Laboratoire de Photonique et de Nanostructures; FranciaFil: Moisan, N.. Universite Paris Sud; FranciaFil: Cubukcu, M.. Universite Pierre et Marie Curie; FranciaFil: Malinowski, G.. Universite Paris Sud; FranciaFil: Ulysse, C.. Laboratoire de Photonique et de Nanostructures; FranciaFil: Faini, G.. Laboratoire de Photonique et de Nanostructures; FranciaFil: Von Bardeleben, H.J.. Universite Pierre et Marie Curie; FranciaFil: Jeudy, V.. Universite Paris Sud; Francia. Université Cergy-Pontoise; FranciaAmerican Physical Society2014-01-14info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27543Gorchon, J.; Curiale, Carlos Javier; Lemaître, A.; Moisan, N.; Cubukcu, M.; et al.; Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer; American Physical Society; Physical Review Letters; 112; 2; 14-1-2014; 026601,1-50031-9007CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.112.026601info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevLett.112.026601info:eu-repo/semantics/altIdentifier/url/https://www.ncbi.nlm.nih.gov/labs/articles/24484033/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:10:56Zoai:ri.conicet.gov.ar:11336/27543instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:10:56.981CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
title Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
spellingShingle Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
Gorchon, J.
Spin Accumulation
Domain Wall Dynamics
Ferromagnetic Semiconductors
title_short Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
title_full Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
title_fullStr Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
title_full_unstemmed Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
title_sort Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
dc.creator.none.fl_str_mv Gorchon, J.
Curiale, Carlos Javier
Lemaître, A.
Moisan, N.
Cubukcu, M.
Malinowski, G.
Ulysse, C.
Faini, G.
Von Bardeleben, H.J.
Jeudy, V.
author Gorchon, J.
author_facet Gorchon, J.
Curiale, Carlos Javier
Lemaître, A.
Moisan, N.
Cubukcu, M.
Malinowski, G.
Ulysse, C.
Faini, G.
Von Bardeleben, H.J.
Jeudy, V.
author_role author
author2 Curiale, Carlos Javier
Lemaître, A.
Moisan, N.
Cubukcu, M.
Malinowski, G.
Ulysse, C.
Faini, G.
Von Bardeleben, H.J.
Jeudy, V.
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Spin Accumulation
Domain Wall Dynamics
Ferromagnetic Semiconductors
topic Spin Accumulation
Domain Wall Dynamics
Ferromagnetic Semiconductors
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
Fil: Gorchon, J.. Universite Paris Sud; Francia
Fil: Curiale, Carlos Javier. Universite Paris Sud; Francia. Laboratoire de Photonique et de Nanostructures; Francia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comision Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Bariloche). División Resonancias Magnéticas; Argentina
Fil: Lemaître, A.. Laboratoire de Photonique et de Nanostructures; Francia
Fil: Moisan, N.. Universite Paris Sud; Francia
Fil: Cubukcu, M.. Universite Pierre et Marie Curie; Francia
Fil: Malinowski, G.. Universite Paris Sud; Francia
Fil: Ulysse, C.. Laboratoire de Photonique et de Nanostructures; Francia
Fil: Faini, G.. Laboratoire de Photonique et de Nanostructures; Francia
Fil: Von Bardeleben, H.J.. Universite Pierre et Marie Curie; Francia
Fil: Jeudy, V.. Universite Paris Sud; Francia. Université Cergy-Pontoise; Francia
description We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
publishDate 2014
dc.date.none.fl_str_mv 2014-01-14
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/27543
Gorchon, J.; Curiale, Carlos Javier; Lemaître, A.; Moisan, N.; Cubukcu, M.; et al.; Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer; American Physical Society; Physical Review Letters; 112; 2; 14-1-2014; 026601,1-5
0031-9007
CONICET Digital
CONICET
url http://hdl.handle.net/11336/27543
identifier_str_mv Gorchon, J.; Curiale, Carlos Javier; Lemaître, A.; Moisan, N.; Cubukcu, M.; et al.; Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer; American Physical Society; Physical Review Letters; 112; 2; 14-1-2014; 026601,1-5
0031-9007
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.112.026601
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevLett.112.026601
info:eu-repo/semantics/altIdentifier/url/https://www.ncbi.nlm.nih.gov/labs/articles/24484033/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842270138360922112
score 13.13397

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