Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Autores
Fontana, Andrés; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Vega, Nahuel Agustín; Muller, Nahuel; De la Fourniere, Emmanuel; Silveira, Fernando; Debray, Mario Ernesto; Palumbo, Félix Roberto Mario
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout. A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.
Fil: Fontana, Andrés. Universidad Tecnológica Nacional; Argentina
Fil: Pazos, Sebastián Matías. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Aguirre, Fernando Leonel. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Vega, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Muller, Nahuel. Comisión Nacional de Energía Atómica; Argentina
Fil: De la Fourniere, Emmanuel. Comisión Nacional de Energía Atómica; Argentina
Fil: Silveira, Fernando. Universidad de la Republica. Facultad de Ingeniería; Uruguay
Fil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; Argentina
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
Analog Single Event Transients (Aset)
Radiation effects
Microbeam
Pulse Quenching
Heavy Ion
Charge Sharing
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/121724
Acceder
id CONICETDig_62993b8950316cff84ca74300466c41e
oai_identifier_str oai:ri.conicet.gov.ar:11336/121724
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmpFontana, AndrésPazos, Sebastián MatíasAguirre, Fernando LeonelVega, Nahuel AgustínMuller, NahuelDe la Fourniere, EmmanuelSilveira, FernandoDebray, Mario ErnestoPalumbo, Félix Roberto MarioAnalog Single Event Transients (Aset)Radiation effectsMicrobeamPulse QuenchingHeavy IonCharge Sharinghttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout. A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.Fil: Fontana, Andrés. Universidad Tecnológica Nacional; ArgentinaFil: Pazos, Sebastián Matías. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Aguirre, Fernando Leonel. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Vega, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Muller, Nahuel. Comisión Nacional de Energía Atómica; ArgentinaFil: De la Fourniere, Emmanuel. Comisión Nacional de Energía Atómica; ArgentinaFil: Silveira, Fernando. Universidad de la Republica. Facultad de Ingeniería; UruguayFil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; ArgentinaFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaInstitute of Electrical and Electronics Engineers Inc.2019-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/121724Fontana, Andrés; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Vega, Nahuel Agustín; Muller, Nahuel; et al.; Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp; Institute of Electrical and Electronics Engineers Inc.; IEEE Transactions on Nuclear Science; 66; 7; 3-2019; 1473-14820018-94991558-1578CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8675987/info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2019.2908174info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:40:31Zoai:ri.conicet.gov.ar:11336/121724instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:40:32.071CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
title Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
spellingShingle Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
Fontana, Andrés
Analog Single Event Transients (Aset)
Radiation effects
Microbeam
Pulse Quenching
Heavy Ion
Charge Sharing
title_short Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
title_full Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
title_fullStr Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
title_full_unstemmed Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
title_sort Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
dc.creator.none.fl_str_mv Fontana, Andrés
Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Vega, Nahuel Agustín
Muller, Nahuel
De la Fourniere, Emmanuel
Silveira, Fernando
Debray, Mario Ernesto
Palumbo, Félix Roberto Mario
author Fontana, Andrés
author_facet Fontana, Andrés
Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Vega, Nahuel Agustín
Muller, Nahuel
De la Fourniere, Emmanuel
Silveira, Fernando
Debray, Mario Ernesto
Palumbo, Félix Roberto Mario
author_role author
author2 Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Vega, Nahuel Agustín
Muller, Nahuel
De la Fourniere, Emmanuel
Silveira, Fernando
Debray, Mario Ernesto
Palumbo, Félix Roberto Mario
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Analog Single Event Transients (Aset)
Radiation effects
Microbeam
Pulse Quenching
Heavy Ion
Charge Sharing
topic Analog Single Event Transients (Aset)
Radiation effects
Microbeam
Pulse Quenching
Heavy Ion
Charge Sharing
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout. A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.
Fil: Fontana, Andrés. Universidad Tecnológica Nacional; Argentina
Fil: Pazos, Sebastián Matías. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Aguirre, Fernando Leonel. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Vega, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Muller, Nahuel. Comisión Nacional de Energía Atómica; Argentina
Fil: De la Fourniere, Emmanuel. Comisión Nacional de Energía Atómica; Argentina
Fil: Silveira, Fernando. Universidad de la Republica. Facultad de Ingeniería; Uruguay
Fil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; Argentina
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia de Área Investigaciones y Aplicaciones No Nucleares. Gerencia Física (CAC). Departamento de Física de la Materia Condensada; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout. A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.
publishDate 2019
dc.date.none.fl_str_mv 2019-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/121724
Fontana, Andrés; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Vega, Nahuel Agustín; Muller, Nahuel; et al.; Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp; Institute of Electrical and Electronics Engineers Inc.; IEEE Transactions on Nuclear Science; 66; 7; 3-2019; 1473-1482
0018-9499
1558-1578
CONICET Digital
CONICET
url http://hdl.handle.net/11336/121724
identifier_str_mv Fontana, Andrés; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Vega, Nahuel Agustín; Muller, Nahuel; et al.; Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp; Institute of Electrical and Electronics Engineers Inc.; IEEE Transactions on Nuclear Science; 66; 7; 3-2019; 1473-1482
0018-9499
1558-1578
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8675987/
info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2019.2908174
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers Inc.
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers Inc.
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614433636089856
score 13.070432

Publicaciones similares