Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3

Autores
Makinistian, Leonardo; Albanesi, Eduardo Aldo; Gonzalez Lemus, Nasly Vanessa; Petukhov, A. G.; Schmidt, D.; Schubert, E.; Schubert, M.; Losovyj, Ya; Galiy, P.; Dowben, P.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, we present a thorough study of the optical properties of the layered orthorhombic compoundIn4Se3. The dielectric function—real and imaginary parts, the complex refraction index, the reflectivity, theabsorption coefficient, and the conductivity of In4Se3 were calculated with the inclusion of the spin-orbitinteraction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employedfor more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and caxes of orthorhombic absorbing In4Se3 single crystals cut approximately parallel to (100) at photon energiesfrom 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss thelocation and nature of the main optical peaks appearing in the spectra. The obtained optical functions displaya rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a highextension, given the scarce experimental information about its optical properties.
Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
Fil: Gonzalez Lemus, Nasly Vanessa. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
Fil: Petukhov, A. G.. South Dakota School of Mines; Estados Unidos
Fil: Schmidt, D.. University Of Nebraska; Estados Unidos
Fil: Schubert, E.. University Of Nebraska; Estados Unidos
Fil: Schubert, M.. University Of Nebraska; Estados Unidos
Fil: Losovyj, Ya. Louisiana State University; Estados Unidos
Fil: Galiy, P.. Ivan Franko National University of Lviv; Ucrania
Fil: Dowben, P.. University Of Nebraska; Estados Unidos
Materia
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78.20.Ci
71.15.Mb
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
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Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/13320
Acceder
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spelling Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3Makinistian, LeonardoAlbanesi, Eduardo AldoGonzalez Lemus, Nasly VanessaPetukhov, A. G.Schmidt, D.Schubert, E.Schubert, M.Losovyj, YaGaliy, P.Dowben, P.71.20.B78.20.Ci71.15.Mbhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, we present a thorough study of the optical properties of the layered orthorhombic compoundIn4Se3. The dielectric function—real and imaginary parts, the complex refraction index, the reflectivity, theabsorption coefficient, and the conductivity of In4Se3 were calculated with the inclusion of the spin-orbitinteraction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employedfor more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and caxes of orthorhombic absorbing In4Se3 single crystals cut approximately parallel to (100) at photon energiesfrom 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss thelocation and nature of the main optical peaks appearing in the spectra. The obtained optical functions displaya rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a highextension, given the scarce experimental information about its optical properties.Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; ArgentinaFil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; ArgentinaFil: Gonzalez Lemus, Nasly Vanessa. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; ArgentinaFil: Petukhov, A. G.. South Dakota School of Mines; Estados UnidosFil: Schmidt, D.. University Of Nebraska; Estados UnidosFil: Schubert, E.. University Of Nebraska; Estados UnidosFil: Schubert, M.. University Of Nebraska; Estados UnidosFil: Losovyj, Ya. Louisiana State University; Estados UnidosFil: Galiy, P.. Ivan Franko National University of Lviv; UcraniaFil: Dowben, P.. University Of Nebraska; Estados UnidosAmerican Physical Society2010-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/13320Makinistian, Leonardo; Albanesi, Eduardo Aldo; Gonzalez Lemus, Nasly Vanessa; Petukhov, A. G.; Schmidt, D.; et al.; Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3; American Physical Society; Physical Review B: Condensed Matter And Materials Physics; 81; 7; 2-2010; 752171-7521781098-0121enginfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.81.075217info:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.075217info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:30:34Zoai:ri.conicet.gov.ar:11336/13320instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:30:35.007CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
title Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
spellingShingle Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
Makinistian, Leonardo
71.20.B
78.20.Ci
71.15.Mb
title_short Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
title_full Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
title_fullStr Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
title_full_unstemmed Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
title_sort Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3
dc.creator.none.fl_str_mv Makinistian, Leonardo
Albanesi, Eduardo Aldo
Gonzalez Lemus, Nasly Vanessa
Petukhov, A. G.
Schmidt, D.
Schubert, E.
Schubert, M.
Losovyj, Ya
Galiy, P.
Dowben, P.
author Makinistian, Leonardo
author_facet Makinistian, Leonardo
Albanesi, Eduardo Aldo
Gonzalez Lemus, Nasly Vanessa
Petukhov, A. G.
Schmidt, D.
Schubert, E.
Schubert, M.
Losovyj, Ya
Galiy, P.
Dowben, P.
author_role author
author2 Albanesi, Eduardo Aldo
Gonzalez Lemus, Nasly Vanessa
Petukhov, A. G.
Schmidt, D.
Schubert, E.
Schubert, M.
Losovyj, Ya
Galiy, P.
Dowben, P.
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv 71.20.B
78.20.Ci
71.15.Mb
topic 71.20.B
78.20.Ci
71.15.Mb
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, we present a thorough study of the optical properties of the layered orthorhombic compoundIn4Se3. The dielectric function—real and imaginary parts, the complex refraction index, the reflectivity, theabsorption coefficient, and the conductivity of In4Se3 were calculated with the inclusion of the spin-orbitinteraction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employedfor more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and caxes of orthorhombic absorbing In4Se3 single crystals cut approximately parallel to (100) at photon energiesfrom 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss thelocation and nature of the main optical peaks appearing in the spectra. The obtained optical functions displaya rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a highextension, given the scarce experimental information about its optical properties.
Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
Fil: Gonzalez Lemus, Nasly Vanessa. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
Fil: Petukhov, A. G.. South Dakota School of Mines; Estados Unidos
Fil: Schmidt, D.. University Of Nebraska; Estados Unidos
Fil: Schubert, E.. University Of Nebraska; Estados Unidos
Fil: Schubert, M.. University Of Nebraska; Estados Unidos
Fil: Losovyj, Ya. Louisiana State University; Estados Unidos
Fil: Galiy, P.. Ivan Franko National University of Lviv; Ucrania
Fil: Dowben, P.. University Of Nebraska; Estados Unidos
description In this work, we present a thorough study of the optical properties of the layered orthorhombic compoundIn4Se3. The dielectric function—real and imaginary parts, the complex refraction index, the reflectivity, theabsorption coefficient, and the conductivity of In4Se3 were calculated with the inclusion of the spin-orbitinteraction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employedfor more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and caxes of orthorhombic absorbing In4Se3 single crystals cut approximately parallel to (100) at photon energiesfrom 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss thelocation and nature of the main optical peaks appearing in the spectra. The obtained optical functions displaya rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a highextension, given the scarce experimental information about its optical properties.
publishDate 2010
dc.date.none.fl_str_mv 2010-02
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/13320
Makinistian, Leonardo; Albanesi, Eduardo Aldo; Gonzalez Lemus, Nasly Vanessa; Petukhov, A. G.; Schmidt, D.; et al.; Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3; American Physical Society; Physical Review B: Condensed Matter And Materials Physics; 81; 7; 2-2010; 752171-752178
1098-0121
url http://hdl.handle.net/11336/13320
identifier_str_mv Makinistian, Leonardo; Albanesi, Eduardo Aldo; Gonzalez Lemus, Nasly Vanessa; Petukhov, A. G.; Schmidt, D.; et al.; Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3; American Physical Society; Physical Review B: Condensed Matter And Materials Physics; 81; 7; 2-2010; 752171-752178
1098-0121
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.81.075217
info:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.075217
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.221938

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