Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach

Autores
Miranda, E.; Roman Acevedo, Wilson Stibens; Rubi, Diego; Lüders, U.; Granell, Pablo Nicolás; Suñé, J.; Levy, Pablo Eduardo
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.
Fil: Miranda, E.. Universidad Autonoma de Barcelona. Facultad de Física; España
Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina
Fil: Lüders, U.. Centre National de la Recherche Scientifique; Francia. École Nationale Supérieure d'Ingénieurs de Caen; Francia
Fil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina
Fil: Suñé, J.. Universidad Autonoma de Barcelona. Facultad de Física; España
Fil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Materia
Memristors
Memorias Resistivas
Modelos Electrónicos
Manganitas
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/40744
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/40744
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approachMiranda, E.Roman Acevedo, Wilson StibensRubi, DiegoLüders, U.Granell, Pablo NicolásSuñé, J.Levy, Pablo EduardoMemristorsMemorias ResistivasModelos ElectrónicosManganitashttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.Fil: Miranda, E.. Universidad Autonoma de Barcelona. Facultad de Física; EspañaFil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; ArgentinaFil: Lüders, U.. Centre National de la Recherche Scientifique; Francia. École Nationale Supérieure d'Ingénieurs de Caen; FranciaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; ArgentinaFil: Suñé, J.. Universidad Autonoma de Barcelona. Facultad de Física; EspañaFil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaAmerican Institute of Physics2017-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/40744Miranda, E.; Roman Acevedo, Wilson Stibens; Rubi, Diego; Lüders, U.; Granell, Pablo Nicolás; et al.; Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach; American Institute of Physics; Journal of Applied Physics; 121; 20; 5-2017; 1-90021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4984051info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4984051info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-11-05T09:44:52Zoai:ri.conicet.gov.ar:11336/40744instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-11-05 09:44:52.62CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
title Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
spellingShingle Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
Miranda, E.
Memristors
Memorias Resistivas
Modelos Electrónicos
Manganitas
title_short Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
title_full Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
title_fullStr Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
title_full_unstemmed Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
title_sort Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach
dc.creator.none.fl_str_mv Miranda, E.
Roman Acevedo, Wilson Stibens
Rubi, Diego
Lüders, U.
Granell, Pablo Nicolás
Suñé, J.
Levy, Pablo Eduardo
author Miranda, E.
author_facet Miranda, E.
Roman Acevedo, Wilson Stibens
Rubi, Diego
Lüders, U.
Granell, Pablo Nicolás
Suñé, J.
Levy, Pablo Eduardo
author_role author
author2 Roman Acevedo, Wilson Stibens
Rubi, Diego
Lüders, U.
Granell, Pablo Nicolás
Suñé, J.
Levy, Pablo Eduardo
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Memristors
Memorias Resistivas
Modelos Electrónicos
Manganitas
topic Memristors
Memorias Resistivas
Modelos Electrónicos
Manganitas
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.
Fil: Miranda, E.. Universidad Autonoma de Barcelona. Facultad de Física; España
Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina
Fil: Lüders, U.. Centre National de la Recherche Scientifique; Francia. École Nationale Supérieure d'Ingénieurs de Caen; Francia
Fil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina
Fil: Suñé, J.. Universidad Autonoma de Barcelona. Facultad de Física; España
Fil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
description The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.
publishDate 2017
dc.date.none.fl_str_mv 2017-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/40744
Miranda, E.; Roman Acevedo, Wilson Stibens; Rubi, Diego; Lüders, U.; Granell, Pablo Nicolás; et al.; Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach; American Institute of Physics; Journal of Applied Physics; 121; 20; 5-2017; 1-9
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/40744
identifier_str_mv Miranda, E.; Roman Acevedo, Wilson Stibens; Rubi, Diego; Lüders, U.; Granell, Pablo Nicolás; et al.; Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach; American Institute of Physics; Journal of Applied Physics; 121; 20; 5-2017; 1-9
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4984051
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4984051
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.121305

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