La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature

Autores
Ranieri, M. G. A.; Cilense, M.; Aguiar, E.C.; Simões, A. Z.; Ponce, Miguel Adolfo; Longo, E.
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Samarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current.
Fil: Ranieri, M. G. A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Cilense, M.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Aguiar, E.C.. Universidade Federal do Mato Grosso do Sul; Brasil
Fil: Simões, A. Z.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Longo, E.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Materia
Sensores
Samarium
Magnetism
Perovskite
Leakage Current Density
Schottky Barrier Height
Lafeo3
Space Charge Polarization
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/76081
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/76081
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperatureRanieri, M. G. A.Cilense, M.Aguiar, E.C.Simões, A. Z.Ponce, Miguel AdolfoLongo, E.SensoresSamariumMagnetismPerovskiteLeakage Current DensitySchottky Barrier HeightLafeo3Space Charge Polarizationhttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2Samarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current.Fil: Ranieri, M. G. A.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Cilense, M.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Aguiar, E.C.. Universidade Federal do Mato Grosso do Sul; BrasilFil: Simões, A. Z.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Longo, E.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilSpringer2017-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/76081Ranieri, M. G. A.; Cilense, M.; Aguiar, E.C.; Simões, A. Z.; Ponce, Miguel Adolfo; et al.; La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature; Springer; Journal of Materials Science: Materials in Electronics; 28; 14; 7-2017; 10747-107570957-45221573-482XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1007/s10854-017-6851-4info:eu-repo/semantics/altIdentifier/url/https://link.springer.com/article/10.1007%2Fs10854-017-6851-4info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:40:01Zoai:ri.conicet.gov.ar:11336/76081instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:40:01.832CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
title La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
spellingShingle La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
Ranieri, M. G. A.
Sensores
Samarium
Magnetism
Perovskite
Leakage Current Density
Schottky Barrier Height
Lafeo3
Space Charge Polarization
title_short La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
title_full La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
title_fullStr La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
title_full_unstemmed La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
title_sort La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
dc.creator.none.fl_str_mv Ranieri, M. G. A.
Cilense, M.
Aguiar, E.C.
Simões, A. Z.
Ponce, Miguel Adolfo
Longo, E.
author Ranieri, M. G. A.
author_facet Ranieri, M. G. A.
Cilense, M.
Aguiar, E.C.
Simões, A. Z.
Ponce, Miguel Adolfo
Longo, E.
author_role author
author2 Cilense, M.
Aguiar, E.C.
Simões, A. Z.
Ponce, Miguel Adolfo
Longo, E.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Sensores
Samarium
Magnetism
Perovskite
Leakage Current Density
Schottky Barrier Height
Lafeo3
Space Charge Polarization
topic Sensores
Samarium
Magnetism
Perovskite
Leakage Current Density
Schottky Barrier Height
Lafeo3
Space Charge Polarization
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Samarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current.
Fil: Ranieri, M. G. A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Cilense, M.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Aguiar, E.C.. Universidade Federal do Mato Grosso do Sul; Brasil
Fil: Simões, A. Z.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Longo, E.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
description Samarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current.
publishDate 2017
dc.date.none.fl_str_mv 2017-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/76081
Ranieri, M. G. A.; Cilense, M.; Aguiar, E.C.; Simões, A. Z.; Ponce, Miguel Adolfo; et al.; La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature; Springer; Journal of Materials Science: Materials in Electronics; 28; 14; 7-2017; 10747-10757
0957-4522
1573-482X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/76081
identifier_str_mv Ranieri, M. G. A.; Cilense, M.; Aguiar, E.C.; Simões, A. Z.; Ponce, Miguel Adolfo; et al.; La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature; Springer; Journal of Materials Science: Materials in Electronics; 28; 14; 7-2017; 10747-10757
0957-4522
1573-482X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1007/s10854-017-6851-4
info:eu-repo/semantics/altIdentifier/url/https://link.springer.com/article/10.1007%2Fs10854-017-6851-4
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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