Few-electron semiconductor quantum dots with Gaussian confinement

Autores
Gomez, Sergio Santiago; Romero, Rodolfo Horacio
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
Fil: Gomez, Sergio Santiago. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Nordeste. Instituto de Modelado e Innovación Tecnológica. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura. Instituto de Modelado e Innovación Tecnológica; Argentina
Fil: Romero, Rodolfo Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Nordeste. Instituto de Modelado e Innovación Tecnológica. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura. Instituto de Modelado e Innovación Tecnológica; Argentina
Materia
QUANTUM DOT
GAUSSIAN POTENTIAL
ELECTRONIC STRUCTURE
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/24793
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Few-electron semiconductor quantum dots with Gaussian confinementGomez, Sergio SantiagoRomero, Rodolfo HoracioQUANTUM DOTGAUSSIAN POTENTIALELECTRONIC STRUCTUREhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.Fil: Gomez, Sergio Santiago. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Nordeste. Instituto de Modelado e Innovación Tecnológica. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura. Instituto de Modelado e Innovación Tecnológica; ArgentinaFil: Romero, Rodolfo Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Nordeste. Instituto de Modelado e Innovación Tecnológica. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura. Instituto de Modelado e Innovación Tecnológica; ArgentinaDe Gruyter2009-03-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/24793Gomez, Sergio Santiago; Romero, Rodolfo Horacio; Few-electron semiconductor quantum dots with Gaussian confinement; De Gruyter; Central European Journal of Physics; 7; 1; 8-3-2009; 12-211895-10821644-3608CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.degruyter.com/view/j/phys.2009.7.issue-1/s11534-008-0132-z/s11534-008-0132-z.xmlinfo:eu-repo/semantics/altIdentifier/doi/10.2478/s11534-008-0132-zinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:35:04Zoai:ri.conicet.gov.ar:11336/24793instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:35:04.92CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Few-electron semiconductor quantum dots with Gaussian confinement
title Few-electron semiconductor quantum dots with Gaussian confinement
spellingShingle Few-electron semiconductor quantum dots with Gaussian confinement
Gomez, Sergio Santiago
QUANTUM DOT
GAUSSIAN POTENTIAL
ELECTRONIC STRUCTURE
title_short Few-electron semiconductor quantum dots with Gaussian confinement
title_full Few-electron semiconductor quantum dots with Gaussian confinement
title_fullStr Few-electron semiconductor quantum dots with Gaussian confinement
title_full_unstemmed Few-electron semiconductor quantum dots with Gaussian confinement
title_sort Few-electron semiconductor quantum dots with Gaussian confinement
dc.creator.none.fl_str_mv Gomez, Sergio Santiago
Romero, Rodolfo Horacio
author Gomez, Sergio Santiago
author_facet Gomez, Sergio Santiago
Romero, Rodolfo Horacio
author_role author
author2 Romero, Rodolfo Horacio
author2_role author
dc.subject.none.fl_str_mv QUANTUM DOT
GAUSSIAN POTENTIAL
ELECTRONIC STRUCTURE
topic QUANTUM DOT
GAUSSIAN POTENTIAL
ELECTRONIC STRUCTURE
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
Fil: Gomez, Sergio Santiago. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Nordeste. Instituto de Modelado e Innovación Tecnológica. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura. Instituto de Modelado e Innovación Tecnológica; Argentina
Fil: Romero, Rodolfo Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Nordeste. Instituto de Modelado e Innovación Tecnológica. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura. Instituto de Modelado e Innovación Tecnológica; Argentina
description We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
publishDate 2009
dc.date.none.fl_str_mv 2009-03-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/24793
Gomez, Sergio Santiago; Romero, Rodolfo Horacio; Few-electron semiconductor quantum dots with Gaussian confinement; De Gruyter; Central European Journal of Physics; 7; 1; 8-3-2009; 12-21
1895-1082
1644-3608
CONICET Digital
CONICET
url http://hdl.handle.net/11336/24793
identifier_str_mv Gomez, Sergio Santiago; Romero, Rodolfo Horacio; Few-electron semiconductor quantum dots with Gaussian confinement; De Gruyter; Central European Journal of Physics; 7; 1; 8-3-2009; 12-21
1895-1082
1644-3608
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.degruyter.com/view/j/phys.2009.7.issue-1/s11534-008-0132-z/s11534-008-0132-z.xml
info:eu-repo/semantics/altIdentifier/doi/10.2478/s11534-008-0132-z
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv De Gruyter
publisher.none.fl_str_mv De Gruyter
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613089851342848
score 13.070432

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