Interface dynamics for copper electrodeposition: The role of organic additives in the growth mode

• Autores: De Leon, P.F.J.; Albano, E.V.; Salvarezza, R.C.; Solari, H.G.
• Año de publicación: 2002
• Idioma: inglés
• Tipo de recurso: artículo
• Fuente: Phys Rev E. 2002;66(4):4
• Materia: Additives; Chemical vapor deposition; Computer simulation; Copper; Diffusion; Electrodeposition; Interfaces (materials); Ions; Mass transfer; Mathematical models; Monolayers; Probability; Surface roughness; Atomistic model; Edwards-Wilkinson equation; Energy barriers; Growth dynamics; Surface chemistry; article
• Institución: Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales

An atomistic model for Cu electrodeposition under nonequilibrium conditions is presented. Cu electrodeposition takes place with a height-dependent deposition rate that accounts for fluctuations in the local [formula presented] ions concentration at the interface, followed by surface diffusion. This model leads to an unstable interface with the development of protrusions and grooves. Subsequently the model is extended to account for the presence of organic additives, which compete with [formula presented] for adsorption at protrusions, leading to a stable interface with scaling exponents consistent with those of the Edwards-Wilkinson equation. The model reproduces the interface evolution experimentally observed for Cu electrodeposition in the absence and in the presence of organic additives. © 2002 The American Physical Society.
Fil:Solari, H.G. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.