Hysteresis switching loops in Ag-manganite memristive interfaces

Autores
Ghenzi, N.; Sánchez, M.J.; Gomez-Marlasca, F.; Levy, P.; Rozenberg, M.J.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.
Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fuente
J Appl Phys 2010;107(9)
Materia
Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by/2.5/ar
Repositorio
Biblioteca Digital (UBA-FCEN)
Institución
Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
OAI Identificador
paperaa:paper_00218979_v107_n9_p_Ghenzi
Acceder
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oai_identifier_str paperaa:paper_00218979_v107_n9_p_Ghenzi
network_acronym_str BDUBAFCEN
repository_id_str 1896
network_name_str Biblioteca Digital (UBA-FCEN)
spelling Hysteresis switching loops in Ag-manganite memristive interfacesGhenzi, N.Sánchez, M.J.Gomez-Marlasca, F.Levy, P.Rozenberg, M.J.Applied electric fieldHysteresis switchingInitial stateMicroscopic mechanismsRealistic modelResistance stateResistive switchingSwitching thresholdsTransition-metal oxidesComputer simulationElectric fieldsHysteresisManganese oxideOxygenOxygen vacanciesTransition metal compoundsTransition metalsVacanciesSwitchingMultilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.2010info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttp://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_GhenziJ Appl Phys 2010;107(9)reponame:Biblioteca Digital (UBA-FCEN)instname:Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturalesinstacron:UBA-FCENenginfo:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/2.5/ar2025-10-16T09:30:16Zpaperaa:paper_00218979_v107_n9_p_GhenziInstitucionalhttps://digital.bl.fcen.uba.ar/Universidad públicaNo correspondehttps://digital.bl.fcen.uba.ar/cgi-bin/oaiserver.cgiana@bl.fcen.uba.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:18962025-10-16 09:30:18.028Biblioteca Digital (UBA-FCEN) - Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturalesfalse
dc.title.none.fl_str_mv Hysteresis switching loops in Ag-manganite memristive interfaces
title Hysteresis switching loops in Ag-manganite memristive interfaces
spellingShingle Hysteresis switching loops in Ag-manganite memristive interfaces
Ghenzi, N.
Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
title_short Hysteresis switching loops in Ag-manganite memristive interfaces
title_full Hysteresis switching loops in Ag-manganite memristive interfaces
title_fullStr Hysteresis switching loops in Ag-manganite memristive interfaces
title_full_unstemmed Hysteresis switching loops in Ag-manganite memristive interfaces
title_sort Hysteresis switching loops in Ag-manganite memristive interfaces
dc.creator.none.fl_str_mv Ghenzi, N.
Sánchez, M.J.
Gomez-Marlasca, F.
Levy, P.
Rozenberg, M.J.
author Ghenzi, N.
author_facet Ghenzi, N.
Sánchez, M.J.
Gomez-Marlasca, F.
Levy, P.
Rozenberg, M.J.
author_role author
author2 Sánchez, M.J.
Gomez-Marlasca, F.
Levy, P.
Rozenberg, M.J.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
topic Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
dc.description.none.fl_txt_mv Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.
Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
description Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.
publishDate 2010
dc.date.none.fl_str_mv 2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
url http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/2.5/ar
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/2.5/ar
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv J Appl Phys 2010;107(9)
reponame:Biblioteca Digital (UBA-FCEN)
instname:Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
instacron:UBA-FCEN
reponame_str Biblioteca Digital (UBA-FCEN)
collection Biblioteca Digital (UBA-FCEN)
instname_str Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
instacron_str UBA-FCEN
institution UBA-FCEN
repository.name.fl_str_mv Biblioteca Digital (UBA-FCEN) - Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
repository.mail.fl_str_mv ana@bl.fcen.uba.ar
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score 12.712165

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