Influence of impurities in polygonization of fcc metals of low stacking fault energy

Autores
Bebczuk de Cusminsky, Juana; Niemela, E. T.
Año de publicación
1977
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Several studies performed on metal polygonization [1-3] indicate that impurities lock the dislocations and prevent their motion during a thermal treatment of previously deformed crystals. Nevertheless, the study made on polygonization of Cu showed contradictory results. Young [4, 5] and Wei et al. [6] observed polygonization in OFHC Cu, but not in 99.999% Cu, and pointed out that polygonization in Cu is very slow and occurs upon prolonged annealing at temperatures near the melting point. Seeger and Schoeck [7, 8] suggested that, in metals of low stacking fault energy like Cu, Ag and Au, the dislocations would be extended into widely separated partials, and thus climbing would be difficult. The fact that polygonization has been observed [4, 5] in OFHC Cu, but not in 99.999% Cu, was explained by considering that impurities tend to allow the partial dislocations to recombine. More recently, French workers [9 - 13], showed that pure Cu polygonizes more easily than impure. In order to clarify the effect of impurities in climbing of the extended dislocations in fcc metals, and to find the effect of the stacking fault energy, the present study was carried out in Cu and Ag crystals.
Laboratorio de Investigaciones de Metalurgia Física
Materia
Ingeniería en Materiales
fcc metal
impurities
metal polygonization
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by/4.0/
Repositorio
SEDICI (UNLP)
Institución
Universidad Nacional de La Plata
OAI Identificador
oai:sedici.unlp.edu.ar:10915/134093

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network_name_str SEDICI (UNLP)
spelling Influence of impurities in polygonization of fcc metals of low stacking fault energyBebczuk de Cusminsky, JuanaNiemela, E. T.Ingeniería en Materialesfcc metalimpuritiesmetal polygonizationSeveral studies performed on metal polygonization [1-3] indicate that impurities lock the dislocations and prevent their motion during a thermal treatment of previously deformed crystals. Nevertheless, the study made on polygonization of Cu showed contradictory results. Young [4, 5] and Wei et al. [6] observed polygonization in OFHC Cu, but not in 99.999% Cu, and pointed out that polygonization in Cu is very slow and occurs upon prolonged annealing at temperatures near the melting point. Seeger and Schoeck [7, 8] suggested that, in metals of low stacking fault energy like Cu, Ag and Au, the dislocations would be extended into widely separated partials, and thus climbing would be difficult. The fact that polygonization has been observed [4, 5] in OFHC Cu, but not in 99.999% Cu, was explained by considering that impurities tend to allow the partial dislocations to recombine. More recently, French workers [9 - 13], showed that pure Cu polygonizes more easily than impure. In order to clarify the effect of impurities in climbing of the extended dislocations in fcc metals, and to find the effect of the stacking fault energy, the present study was carried out in Cu and Ag crystals.Laboratorio de Investigaciones de Metalurgia Física1977info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionArticulohttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdf1492-1494http://sedici.unlp.edu.ar/handle/10915/134093enginfo:eu-repo/semantics/altIdentifier/issn/0022-2461info:eu-repo/semantics/altIdentifier/issn/1573-4803info:eu-repo/semantics/altIdentifier/doi/10.1007/bf00540869info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/4.0/Creative Commons Attribution 4.0 International (CC BY 4.0)reponame:SEDICI (UNLP)instname:Universidad Nacional de La Platainstacron:UNLP2025-09-29T11:31:52Zoai:sedici.unlp.edu.ar:10915/134093Institucionalhttp://sedici.unlp.edu.ar/Universidad públicaNo correspondehttp://sedici.unlp.edu.ar/oai/snrdalira@sedici.unlp.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:13292025-09-29 11:31:52.253SEDICI (UNLP) - Universidad Nacional de La Platafalse
dc.title.none.fl_str_mv Influence of impurities in polygonization of fcc metals of low stacking fault energy
title Influence of impurities in polygonization of fcc metals of low stacking fault energy
spellingShingle Influence of impurities in polygonization of fcc metals of low stacking fault energy
Bebczuk de Cusminsky, Juana
Ingeniería en Materiales
fcc metal
impurities
metal polygonization
title_short Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_full Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_fullStr Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_full_unstemmed Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_sort Influence of impurities in polygonization of fcc metals of low stacking fault energy
dc.creator.none.fl_str_mv Bebczuk de Cusminsky, Juana
Niemela, E. T.
author Bebczuk de Cusminsky, Juana
author_facet Bebczuk de Cusminsky, Juana
Niemela, E. T.
author_role author
author2 Niemela, E. T.
author2_role author
dc.subject.none.fl_str_mv Ingeniería en Materiales
fcc metal
impurities
metal polygonization
topic Ingeniería en Materiales
fcc metal
impurities
metal polygonization
dc.description.none.fl_txt_mv Several studies performed on metal polygonization [1-3] indicate that impurities lock the dislocations and prevent their motion during a thermal treatment of previously deformed crystals. Nevertheless, the study made on polygonization of Cu showed contradictory results. Young [4, 5] and Wei et al. [6] observed polygonization in OFHC Cu, but not in 99.999% Cu, and pointed out that polygonization in Cu is very slow and occurs upon prolonged annealing at temperatures near the melting point. Seeger and Schoeck [7, 8] suggested that, in metals of low stacking fault energy like Cu, Ag and Au, the dislocations would be extended into widely separated partials, and thus climbing would be difficult. The fact that polygonization has been observed [4, 5] in OFHC Cu, but not in 99.999% Cu, was explained by considering that impurities tend to allow the partial dislocations to recombine. More recently, French workers [9 - 13], showed that pure Cu polygonizes more easily than impure. In order to clarify the effect of impurities in climbing of the extended dislocations in fcc metals, and to find the effect of the stacking fault energy, the present study was carried out in Cu and Ag crystals.
Laboratorio de Investigaciones de Metalurgia Física
description Several studies performed on metal polygonization [1-3] indicate that impurities lock the dislocations and prevent their motion during a thermal treatment of previously deformed crystals. Nevertheless, the study made on polygonization of Cu showed contradictory results. Young [4, 5] and Wei et al. [6] observed polygonization in OFHC Cu, but not in 99.999% Cu, and pointed out that polygonization in Cu is very slow and occurs upon prolonged annealing at temperatures near the melting point. Seeger and Schoeck [7, 8] suggested that, in metals of low stacking fault energy like Cu, Ag and Au, the dislocations would be extended into widely separated partials, and thus climbing would be difficult. The fact that polygonization has been observed [4, 5] in OFHC Cu, but not in 99.999% Cu, was explained by considering that impurities tend to allow the partial dislocations to recombine. More recently, French workers [9 - 13], showed that pure Cu polygonizes more easily than impure. In order to clarify the effect of impurities in climbing of the extended dislocations in fcc metals, and to find the effect of the stacking fault energy, the present study was carried out in Cu and Ag crystals.
publishDate 1977
dc.date.none.fl_str_mv 1977
dc.type.none.fl_str_mv info:eu-repo/semantics/article
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info:eu-repo/semantics/altIdentifier/issn/1573-4803
info:eu-repo/semantics/altIdentifier/doi/10.1007/bf00540869
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/4.0/
Creative Commons Attribution 4.0 International (CC BY 4.0)
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/4.0/
Creative Commons Attribution 4.0 International (CC BY 4.0)
dc.format.none.fl_str_mv application/pdf
1492-1494
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