Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells

Autores
Ventura, Cecilia Ileana; Querales Flores, Jose Daniel; Fuhr, Javier Daniel; Barrio, Rafael A
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Ternary group-IV alloys have a wide potential for applications in infrared devices and optoelectronics. In connection with photovoltaic applications, they are among the most promising materials for inclusion in the next generation of high-efficiency multijunction solar cells, because they can be lattice matched to substrates as GaAs and Ge, offering the possibility of a range of band gaps complementary to III-V semiconductors. Apart from the full decoupling of lattice and band structures in Ge1-x-ySixSny alloys, experimentally confirmed, they allow preparation in a controllable and large range of compositions, thus enabling to tune their band gap. Recently, optical experiments on ternary alloy-based films, photodetectors measured the direct absorption edges and probed the compositional dependence of the direct gap. The nature of the fundamental gap of Ge1-x-ySixSny alloys is still unknown, as neither experimental data on the indirect edges nor electronic structure calculations are available, as yet. Here, we report a first calculation of the electronic structure of Ge1-x-ySixSny ternary alloys, employing a combined tight-binding and virtual crystal approximation method, which proved to be useful to describe group-IV semiconductor binary alloys. Our results confirm predictions and experimental indications that a 1 eV band gap is indeed attainable with these ternary alloys, as required for the fourth layer plan to be added to present-day record-efficiency triple-junction solar cells, to further increase their efficiency, for example, for satellite applications. When lattice matched to Ge, we find that Ge1-x-ySixSny ternary alloys have an indirect gap with a compositional dependence reflecting the presence of two competing minima in the conduction band.
Fil: Ventura, Cecilia Ileana. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Querales Flores, Jose Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Fuhr, Javier Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Barrio, Rafael A. Universidad Nacional Autónoma de México; México
Materia
Electronic Structure
Multijunction Solar Cells
Semiconductor Alloys
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/37847
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cellsVentura, Cecilia IleanaQuerales Flores, Jose DanielFuhr, Javier DanielBarrio, Rafael AElectronic StructureMultijunction Solar CellsSemiconductor Alloyshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Ternary group-IV alloys have a wide potential for applications in infrared devices and optoelectronics. In connection with photovoltaic applications, they are among the most promising materials for inclusion in the next generation of high-efficiency multijunction solar cells, because they can be lattice matched to substrates as GaAs and Ge, offering the possibility of a range of band gaps complementary to III-V semiconductors. Apart from the full decoupling of lattice and band structures in Ge1-x-ySixSny alloys, experimentally confirmed, they allow preparation in a controllable and large range of compositions, thus enabling to tune their band gap. Recently, optical experiments on ternary alloy-based films, photodetectors measured the direct absorption edges and probed the compositional dependence of the direct gap. The nature of the fundamental gap of Ge1-x-ySixSny alloys is still unknown, as neither experimental data on the indirect edges nor electronic structure calculations are available, as yet. Here, we report a first calculation of the electronic structure of Ge1-x-ySixSny ternary alloys, employing a combined tight-binding and virtual crystal approximation method, which proved to be useful to describe group-IV semiconductor binary alloys. Our results confirm predictions and experimental indications that a 1 eV band gap is indeed attainable with these ternary alloys, as required for the fourth layer plan to be added to present-day record-efficiency triple-junction solar cells, to further increase their efficiency, for example, for satellite applications. When lattice matched to Ge, we find that Ge1-x-ySixSny ternary alloys have an indirect gap with a compositional dependence reflecting the presence of two competing minima in the conduction band.Fil: Ventura, Cecilia Ileana. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Querales Flores, Jose Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Fuhr, Javier Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Barrio, Rafael A. Universidad Nacional Autónoma de México; MéxicoJohn Wiley & Sons Ltd2015-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/37847Ventura, Cecilia Ileana; Querales Flores, Jose Daniel; Fuhr, Javier Daniel; Barrio, Rafael A; Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells; John Wiley & Sons Ltd; Progress In Photovoltaics; 23; 1; 1-2015; 112-1181062-7995CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1002/pip.2405info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pip.2405/abstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:24:47Zoai:ri.conicet.gov.ar:11336/37847instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:24:47.486CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
title Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
spellingShingle Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
Ventura, Cecilia Ileana
Electronic Structure
Multijunction Solar Cells
Semiconductor Alloys
title_short Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
title_full Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
title_fullStr Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
title_full_unstemmed Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
title_sort Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells
dc.creator.none.fl_str_mv Ventura, Cecilia Ileana
Querales Flores, Jose Daniel
Fuhr, Javier Daniel
Barrio, Rafael A
author Ventura, Cecilia Ileana
author_facet Ventura, Cecilia Ileana
Querales Flores, Jose Daniel
Fuhr, Javier Daniel
Barrio, Rafael A
author_role author
author2 Querales Flores, Jose Daniel
Fuhr, Javier Daniel
Barrio, Rafael A
author2_role author
author
author
dc.subject.none.fl_str_mv Electronic Structure
Multijunction Solar Cells
Semiconductor Alloys
topic Electronic Structure
Multijunction Solar Cells
Semiconductor Alloys
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Ternary group-IV alloys have a wide potential for applications in infrared devices and optoelectronics. In connection with photovoltaic applications, they are among the most promising materials for inclusion in the next generation of high-efficiency multijunction solar cells, because they can be lattice matched to substrates as GaAs and Ge, offering the possibility of a range of band gaps complementary to III-V semiconductors. Apart from the full decoupling of lattice and band structures in Ge1-x-ySixSny alloys, experimentally confirmed, they allow preparation in a controllable and large range of compositions, thus enabling to tune their band gap. Recently, optical experiments on ternary alloy-based films, photodetectors measured the direct absorption edges and probed the compositional dependence of the direct gap. The nature of the fundamental gap of Ge1-x-ySixSny alloys is still unknown, as neither experimental data on the indirect edges nor electronic structure calculations are available, as yet. Here, we report a first calculation of the electronic structure of Ge1-x-ySixSny ternary alloys, employing a combined tight-binding and virtual crystal approximation method, which proved to be useful to describe group-IV semiconductor binary alloys. Our results confirm predictions and experimental indications that a 1 eV band gap is indeed attainable with these ternary alloys, as required for the fourth layer plan to be added to present-day record-efficiency triple-junction solar cells, to further increase their efficiency, for example, for satellite applications. When lattice matched to Ge, we find that Ge1-x-ySixSny ternary alloys have an indirect gap with a compositional dependence reflecting the presence of two competing minima in the conduction band.
Fil: Ventura, Cecilia Ileana. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Querales Flores, Jose Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Fuhr, Javier Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Barrio, Rafael A. Universidad Nacional Autónoma de México; México
description Ternary group-IV alloys have a wide potential for applications in infrared devices and optoelectronics. In connection with photovoltaic applications, they are among the most promising materials for inclusion in the next generation of high-efficiency multijunction solar cells, because they can be lattice matched to substrates as GaAs and Ge, offering the possibility of a range of band gaps complementary to III-V semiconductors. Apart from the full decoupling of lattice and band structures in Ge1-x-ySixSny alloys, experimentally confirmed, they allow preparation in a controllable and large range of compositions, thus enabling to tune their band gap. Recently, optical experiments on ternary alloy-based films, photodetectors measured the direct absorption edges and probed the compositional dependence of the direct gap. The nature of the fundamental gap of Ge1-x-ySixSny alloys is still unknown, as neither experimental data on the indirect edges nor electronic structure calculations are available, as yet. Here, we report a first calculation of the electronic structure of Ge1-x-ySixSny ternary alloys, employing a combined tight-binding and virtual crystal approximation method, which proved to be useful to describe group-IV semiconductor binary alloys. Our results confirm predictions and experimental indications that a 1 eV band gap is indeed attainable with these ternary alloys, as required for the fourth layer plan to be added to present-day record-efficiency triple-junction solar cells, to further increase their efficiency, for example, for satellite applications. When lattice matched to Ge, we find that Ge1-x-ySixSny ternary alloys have an indirect gap with a compositional dependence reflecting the presence of two competing minima in the conduction band.
publishDate 2015
dc.date.none.fl_str_mv 2015-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/37847
Ventura, Cecilia Ileana; Querales Flores, Jose Daniel; Fuhr, Javier Daniel; Barrio, Rafael A; Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells; John Wiley & Sons Ltd; Progress In Photovoltaics; 23; 1; 1-2015; 112-118
1062-7995
CONICET Digital
CONICET
url http://hdl.handle.net/11336/37847
identifier_str_mv Ventura, Cecilia Ileana; Querales Flores, Jose Daniel; Fuhr, Javier Daniel; Barrio, Rafael A; Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells; John Wiley & Sons Ltd; Progress In Photovoltaics; 23; 1; 1-2015; 112-118
1062-7995
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1002/pip.2405
info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pip.2405/abstract
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
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eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv John Wiley & Sons Ltd
publisher.none.fl_str_mv John Wiley & Sons Ltd
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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