Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2

Autores
Torchia, Gustavo Adrian; Alvira, Fernando Carlos
Año de publicación
2020
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We analyzed the ablation dynamics for Silicon atoms located in two different environments. Experiments were done with semiconductor (silicon wafer) and a dielectric material (fused silica). We point out some difference in plasma dynamics for Silicon in both environments. Those results can not be explained with current and accepted theoretical models, which asseverate that after the femtosecond laser pulse interact with the surface, the process evolve as metal regardless the kind of material under excitation. Electronic density and temperature were measured with temporal resolution on SiO2 and Si samples by using standard fs LIBS imaging spectroscopy. Extinction time of both plasmas is different depending on the kind of sample under irradiation. Lifetime for plasma obtained in dielectric sample is shorter than that of semiconductor. The main reason to explain this behavior is related to the deep defect induced in the dielectric (fused silica) gap by the femtosecond process; these centers act as sink for the free electron promoted by the laser interaction from the valence band to the plasma, so for dielectrics, shorter lifetime plasmas are obtained when femtosecond pulse irradiation is conducted.
Fil: Torchia, Gustavo Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Centro de Investigaciones Ópticas. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones Ópticas. Universidad Nacional de La Plata. Centro de Investigaciones Ópticas; Argentina
Fil: Alvira, Fernando Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Universidad Nacional de La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB; Argentina. Universidad Nacional de Quilmes. Departamento de Ciencia y Tecnología; Argentina
Materia
SILICON
FEMTO LIBS
FUSED SILICA
ULTRA SHORT ABLATION
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/154666
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/154666
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2Torchia, Gustavo AdrianAlvira, Fernando CarlosSILICONFEMTO LIBSFUSED SILICAULTRA SHORT ABLATIONhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We analyzed the ablation dynamics for Silicon atoms located in two different environments. Experiments were done with semiconductor (silicon wafer) and a dielectric material (fused silica). We point out some difference in plasma dynamics for Silicon in both environments. Those results can not be explained with current and accepted theoretical models, which asseverate that after the femtosecond laser pulse interact with the surface, the process evolve as metal regardless the kind of material under excitation. Electronic density and temperature were measured with temporal resolution on SiO2 and Si samples by using standard fs LIBS imaging spectroscopy. Extinction time of both plasmas is different depending on the kind of sample under irradiation. Lifetime for plasma obtained in dielectric sample is shorter than that of semiconductor. The main reason to explain this behavior is related to the deep defect induced in the dielectric (fused silica) gap by the femtosecond process; these centers act as sink for the free electron promoted by the laser interaction from the valence band to the plasma, so for dielectrics, shorter lifetime plasmas are obtained when femtosecond pulse irradiation is conducted.Fil: Torchia, Gustavo Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Centro de Investigaciones Ópticas. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones Ópticas. Universidad Nacional de La Plata. Centro de Investigaciones Ópticas; ArgentinaFil: Alvira, Fernando Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Universidad Nacional de La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB; Argentina. Universidad Nacional de Quilmes. Departamento de Ciencia y Tecnología; ArgentinaAmerican Chemical Society2020-12-23info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/154666Torchia, Gustavo Adrian; Alvira, Fernando Carlos; Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2; American Chemical Society; ChemRxiv; 23-12-2020; 1-112573-2293CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.26434/chemrxiv.13476039.v1info:eu-repo/semantics/altIdentifier/url/https://chemrxiv.org/engage/chemrxiv/article-details/60c753534c8919377bad42e0info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:52:51Zoai:ri.conicet.gov.ar:11336/154666instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:52:51.535CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
title Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
spellingShingle Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
Torchia, Gustavo Adrian
SILICON
FEMTO LIBS
FUSED SILICA
ULTRA SHORT ABLATION
title_short Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
title_full Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
title_fullStr Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
title_full_unstemmed Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
title_sort Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
dc.creator.none.fl_str_mv Torchia, Gustavo Adrian
Alvira, Fernando Carlos
author Torchia, Gustavo Adrian
author_facet Torchia, Gustavo Adrian
Alvira, Fernando Carlos
author_role author
author2 Alvira, Fernando Carlos
author2_role author
dc.subject.none.fl_str_mv SILICON
FEMTO LIBS
FUSED SILICA
ULTRA SHORT ABLATION
topic SILICON
FEMTO LIBS
FUSED SILICA
ULTRA SHORT ABLATION
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We analyzed the ablation dynamics for Silicon atoms located in two different environments. Experiments were done with semiconductor (silicon wafer) and a dielectric material (fused silica). We point out some difference in plasma dynamics for Silicon in both environments. Those results can not be explained with current and accepted theoretical models, which asseverate that after the femtosecond laser pulse interact with the surface, the process evolve as metal regardless the kind of material under excitation. Electronic density and temperature were measured with temporal resolution on SiO2 and Si samples by using standard fs LIBS imaging spectroscopy. Extinction time of both plasmas is different depending on the kind of sample under irradiation. Lifetime for plasma obtained in dielectric sample is shorter than that of semiconductor. The main reason to explain this behavior is related to the deep defect induced in the dielectric (fused silica) gap by the femtosecond process; these centers act as sink for the free electron promoted by the laser interaction from the valence band to the plasma, so for dielectrics, shorter lifetime plasmas are obtained when femtosecond pulse irradiation is conducted.
Fil: Torchia, Gustavo Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Centro de Investigaciones Ópticas. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones Ópticas. Universidad Nacional de La Plata. Centro de Investigaciones Ópticas; Argentina
Fil: Alvira, Fernando Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Universidad Nacional de La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB; Argentina. Universidad Nacional de Quilmes. Departamento de Ciencia y Tecnología; Argentina
description We analyzed the ablation dynamics for Silicon atoms located in two different environments. Experiments were done with semiconductor (silicon wafer) and a dielectric material (fused silica). We point out some difference in plasma dynamics for Silicon in both environments. Those results can not be explained with current and accepted theoretical models, which asseverate that after the femtosecond laser pulse interact with the surface, the process evolve as metal regardless the kind of material under excitation. Electronic density and temperature were measured with temporal resolution on SiO2 and Si samples by using standard fs LIBS imaging spectroscopy. Extinction time of both plasmas is different depending on the kind of sample under irradiation. Lifetime for plasma obtained in dielectric sample is shorter than that of semiconductor. The main reason to explain this behavior is related to the deep defect induced in the dielectric (fused silica) gap by the femtosecond process; these centers act as sink for the free electron promoted by the laser interaction from the valence band to the plasma, so for dielectrics, shorter lifetime plasmas are obtained when femtosecond pulse irradiation is conducted.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-23
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/154666
Torchia, Gustavo Adrian; Alvira, Fernando Carlos; Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2; American Chemical Society; ChemRxiv; 23-12-2020; 1-11
2573-2293
CONICET Digital
CONICET
url http://hdl.handle.net/11336/154666
identifier_str_mv Torchia, Gustavo Adrian; Alvira, Fernando Carlos; Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2; American Chemical Society; ChemRxiv; 23-12-2020; 1-11
2573-2293
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.26434/chemrxiv.13476039.v1
info:eu-repo/semantics/altIdentifier/url/https://chemrxiv.org/engage/chemrxiv/article-details/60c753534c8919377bad42e0
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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