Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets

Autores
Miravet Martinez, Daniel; Proetto, Cesar Ramon
Año de publicación
2016
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.
Fil: Miravet Martinez, Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Proetto, Cesar Ramon. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Materia
Semiconductors
Quantum Hall Ferromagnets
Hartree Fock
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/126145

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spelling Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnetsMiravet Martinez, DanielProetto, Cesar RamonSemiconductorsQuantum Hall FerromagnetsHartree Fockhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.Fil: Miravet Martinez, Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Proetto, Cesar Ramon. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaAmerican Physical Society2016-08-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/126145Miravet Martinez, Daniel; Proetto, Cesar Ramon; Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets; American Physical Society; Physical Review B; 94; 8; 10-8-2016; 1-140163-18292469-9969CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.085304info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.94.085304info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/abs/1607.07909info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:19:59Zoai:ri.conicet.gov.ar:11336/126145instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:19:59.833CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
title Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
spellingShingle Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
Miravet Martinez, Daniel
Semiconductors
Quantum Hall Ferromagnets
Hartree Fock
title_short Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
title_full Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
title_fullStr Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
title_full_unstemmed Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
title_sort Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
dc.creator.none.fl_str_mv Miravet Martinez, Daniel
Proetto, Cesar Ramon
author Miravet Martinez, Daniel
author_facet Miravet Martinez, Daniel
Proetto, Cesar Ramon
author_role author
author2 Proetto, Cesar Ramon
author2_role author
dc.subject.none.fl_str_mv Semiconductors
Quantum Hall Ferromagnets
Hartree Fock
topic Semiconductors
Quantum Hall Ferromagnets
Hartree Fock
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.
Fil: Miravet Martinez, Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Proetto, Cesar Ramon. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
description When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.
publishDate 2016
dc.date.none.fl_str_mv 2016-08-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/126145
Miravet Martinez, Daniel; Proetto, Cesar Ramon; Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets; American Physical Society; Physical Review B; 94; 8; 10-8-2016; 1-14
0163-1829
2469-9969
CONICET Digital
CONICET
url http://hdl.handle.net/11336/126145
identifier_str_mv Miravet Martinez, Daniel; Proetto, Cesar Ramon; Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets; American Physical Society; Physical Review B; 94; 8; 10-8-2016; 1-14
0163-1829
2469-9969
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.085304
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.94.085304
info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/abs/1607.07909
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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