Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
- Autores
- Miravet Martinez, Daniel; Proetto, Cesar Ramon
- Año de publicación
- 2016
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.
Fil: Miravet Martinez, Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Proetto, Cesar Ramon. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina - Materia
-
Semiconductors
Quantum Hall Ferromagnets
Hartree Fock - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/126145
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Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnetsMiravet Martinez, DanielProetto, Cesar RamonSemiconductorsQuantum Hall FerromagnetsHartree Fockhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.Fil: Miravet Martinez, Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Proetto, Cesar Ramon. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaAmerican Physical Society2016-08-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/126145Miravet Martinez, Daniel; Proetto, Cesar Ramon; Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets; American Physical Society; Physical Review B; 94; 8; 10-8-2016; 1-140163-18292469-9969CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.085304info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.94.085304info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/abs/1607.07909info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:19:59Zoai:ri.conicet.gov.ar:11336/126145instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:19:59.833CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
title |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
spellingShingle |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets Miravet Martinez, Daniel Semiconductors Quantum Hall Ferromagnets Hartree Fock |
title_short |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
title_full |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
title_fullStr |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
title_full_unstemmed |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
title_sort |
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets |
dc.creator.none.fl_str_mv |
Miravet Martinez, Daniel Proetto, Cesar Ramon |
author |
Miravet Martinez, Daniel |
author_facet |
Miravet Martinez, Daniel Proetto, Cesar Ramon |
author_role |
author |
author2 |
Proetto, Cesar Ramon |
author2_role |
author |
dc.subject.none.fl_str_mv |
Semiconductors Quantum Hall Ferromagnets Hartree Fock |
topic |
Semiconductors Quantum Hall Ferromagnets Hartree Fock |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers. Fil: Miravet Martinez, Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Proetto, Cesar Ramon. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina |
description |
When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1,2,3,...), we have analyzed in detail the crossings at ν=3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-08-10 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/126145 Miravet Martinez, Daniel; Proetto, Cesar Ramon; Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets; American Physical Society; Physical Review B; 94; 8; 10-8-2016; 1-14 0163-1829 2469-9969 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/126145 |
identifier_str_mv |
Miravet Martinez, Daniel; Proetto, Cesar Ramon; Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets; American Physical Society; Physical Review B; 94; 8; 10-8-2016; 1-14 0163-1829 2469-9969 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.085304 info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.94.085304 info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/abs/1607.07909 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Physical Society |
publisher.none.fl_str_mv |
American Physical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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13.070432 |