Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments

Autores
Sirena, Martin
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, a phenomenological approach is proposed to analyze the electrical transport through an insulating barrier in insulating/metallic bilayer systems using conductive atomic force microscopy. The influence of the substrate in the electrical properties of ferroelectric/ferromagnetic bilayers was studied in the frame of this model. The substrate roughness was found to increase the barrier height distribution and increase the attenuation length in the material, reducing the barrier quality for the developing of multiferroic tunnel junctions.
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro | Universidad Nacional de Cuyo. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Materia
atomic force microscopy
ferroelectric materials
metal-insulator boundaries
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/278603
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/278603
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experimentsSirena, Martinatomic force microscopyferroelectric materialsmetal-insulator boundarieshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, a phenomenological approach is proposed to analyze the electrical transport through an insulating barrier in insulating/metallic bilayer systems using conductive atomic force microscopy. The influence of the substrate in the electrical properties of ferroelectric/ferromagnetic bilayers was studied in the frame of this model. The substrate roughness was found to increase the barrier height distribution and increase the attenuation length in the material, reducing the barrier quality for the developing of multiferroic tunnel junctions.Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro | Universidad Nacional de Cuyo. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaAmerican Institute of Physics2011-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/278603Sirena, Martin; Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments; American Institute of Physics; Journal of Applied Physics; 110; 6; 9-2011; 63923-639260021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.3642971info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-01-14T12:12:09Zoai:ri.conicet.gov.ar:11336/278603instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-01-14 12:12:10.146CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
title Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
spellingShingle Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
Sirena, Martin
atomic force microscopy
ferroelectric materials
metal-insulator boundaries
title_short Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
title_full Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
title_fullStr Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
title_full_unstemmed Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
title_sort Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments
dc.creator.none.fl_str_mv Sirena, Martin
author Sirena, Martin
author_facet Sirena, Martin
author_role author
dc.subject.none.fl_str_mv atomic force microscopy
ferroelectric materials
metal-insulator boundaries
topic atomic force microscopy
ferroelectric materials
metal-insulator boundaries
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, a phenomenological approach is proposed to analyze the electrical transport through an insulating barrier in insulating/metallic bilayer systems using conductive atomic force microscopy. The influence of the substrate in the electrical properties of ferroelectric/ferromagnetic bilayers was studied in the frame of this model. The substrate roughness was found to increase the barrier height distribution and increase the attenuation length in the material, reducing the barrier quality for the developing of multiferroic tunnel junctions.
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro | Universidad Nacional de Cuyo. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
description In this work, a phenomenological approach is proposed to analyze the electrical transport through an insulating barrier in insulating/metallic bilayer systems using conductive atomic force microscopy. The influence of the substrate in the electrical properties of ferroelectric/ferromagnetic bilayers was studied in the frame of this model. The substrate roughness was found to increase the barrier height distribution and increase the attenuation length in the material, reducing the barrier quality for the developing of multiferroic tunnel junctions.
publishDate 2011
dc.date.none.fl_str_mv 2011-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/278603
Sirena, Martin; Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments; American Institute of Physics; Journal of Applied Physics; 110; 6; 9-2011; 63923-63926
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/278603
identifier_str_mv Sirena, Martin; Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments; American Institute of Physics; Journal of Applied Physics; 110; 6; 9-2011; 63923-63926
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3642971
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.113929

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