Band gap tuning of layered III-Te materials

Autores
Olmos Asar, Jimena Anahí; Rocha Leão, Cedric; Fazzio, Adalberto
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.
Fil: Olmos Asar, Jimena Anahí. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Rocha Leão, Cedric. Universidade Federal Do Abc; Brasil
Fil: Fazzio, Adalberto. Centro Brasileiro de Pesquisas Físicas; Brasil
Materia
GaTe
Optoelectronic devices
Van der Waals heterostructures
Band gap tuning
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/86335
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/86335
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Band gap tuning of layered III-Te materialsOlmos Asar, Jimena AnahíRocha Leão, CedricFazzio, AdalbertoGaTeOptoelectronic devicesVan der Waals heterostructuresBand gap tuninghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.Fil: Olmos Asar, Jimena Anahí. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Rocha Leão, Cedric. Universidade Federal Do Abc; BrasilFil: Fazzio, Adalberto. Centro Brasileiro de Pesquisas Físicas; BrasilAmerican Institute of Physics2018-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/86335Olmos Asar, Jimena Anahí; Rocha Leão, Cedric; Fazzio, Adalberto; Band gap tuning of layered III-Te materials; American Institute of Physics; Journal of Applied Physics; 124; 4; 7-2018; 45104-451040021-89791089-7550CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.5021259info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5021259info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:46:33Zoai:ri.conicet.gov.ar:11336/86335instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:46:33.466CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Band gap tuning of layered III-Te materials
title Band gap tuning of layered III-Te materials
spellingShingle Band gap tuning of layered III-Te materials
Olmos Asar, Jimena Anahí
GaTe
Optoelectronic devices
Van der Waals heterostructures
Band gap tuning
title_short Band gap tuning of layered III-Te materials
title_full Band gap tuning of layered III-Te materials
title_fullStr Band gap tuning of layered III-Te materials
title_full_unstemmed Band gap tuning of layered III-Te materials
title_sort Band gap tuning of layered III-Te materials
dc.creator.none.fl_str_mv Olmos Asar, Jimena Anahí
Rocha Leão, Cedric
Fazzio, Adalberto
author Olmos Asar, Jimena Anahí
author_facet Olmos Asar, Jimena Anahí
Rocha Leão, Cedric
Fazzio, Adalberto
author_role author
author2 Rocha Leão, Cedric
Fazzio, Adalberto
author2_role author
author
dc.subject.none.fl_str_mv GaTe
Optoelectronic devices
Van der Waals heterostructures
Band gap tuning
topic GaTe
Optoelectronic devices
Van der Waals heterostructures
Band gap tuning
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.
Fil: Olmos Asar, Jimena Anahí. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Rocha Leão, Cedric. Universidade Federal Do Abc; Brasil
Fil: Fazzio, Adalberto. Centro Brasileiro de Pesquisas Físicas; Brasil
description Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.
publishDate 2018
dc.date.none.fl_str_mv 2018-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/86335
Olmos Asar, Jimena Anahí; Rocha Leão, Cedric; Fazzio, Adalberto; Band gap tuning of layered III-Te materials; American Institute of Physics; Journal of Applied Physics; 124; 4; 7-2018; 45104-45104
0021-8979
1089-7550
CONICET Digital
CONICET
url http://hdl.handle.net/11336/86335
identifier_str_mv Olmos Asar, Jimena Anahí; Rocha Leão, Cedric; Fazzio, Adalberto; Band gap tuning of layered III-Te materials; American Institute of Physics; Journal of Applied Physics; 124; 4; 7-2018; 45104-45104
0021-8979
1089-7550
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.5021259
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5021259
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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