The Bulk Band Structure and Inner Potential of Layered In4Se3

Autores
Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; Albanesi, Eduardo Aldo; Petukhov, A.G.; Galiy, P.; Fiyala, Y.
Año de publicación
2008
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.
Fil: Liu, J.. University Of Nebraska; Estados Unidos
Fil: Losovyj, Y. B.. University Of Nebraska; Estados Unidos
Fil: Komesu, T.. University Of Nebraska; Estados Unidos
Fil: Dowben, P.A.. University Of Nebraska; Estados Unidos
Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Petukhov, A.G.. South Dakota School of Mines; Estados Unidos
Fil: Galiy, P.. Lviv National University; Ucrania
Fil: Fiyala, Y.. Lviv National University; Ucrania
Materia
Layered Semiconductors
Bulk Band Structure
Photoemission
Fp-Lapw
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/25400
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling The Bulk Band Structure and Inner Potential of Layered In4Se3Liu, J.Losovyj, Y. B.Komesu, T.Dowben, P.A.Makinistian, LeonardoAlbanesi, Eduardo AldoPetukhov, A.G.Galiy, P.Fiyala, Y.Layered SemiconductorsBulk Band StructurePhotoemissionFp-Lapwhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.Fil: Liu, J.. University Of Nebraska; Estados UnidosFil: Losovyj, Y. B.. University Of Nebraska; Estados UnidosFil: Komesu, T.. University Of Nebraska; Estados UnidosFil: Dowben, P.A.. University Of Nebraska; Estados UnidosFil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Petukhov, A.G.. South Dakota School of Mines; Estados UnidosFil: Galiy, P.. Lviv National University; UcraniaFil: Fiyala, Y.. Lviv National University; UcraniaElsevier Science2008-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/25400Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; et al.; The Bulk Band Structure and Inner Potential of Layered In4Se3; Elsevier Science; Applied Surface Science; 254; 12-2008; 4322-43250169-4332CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.apsusc.2008.01.061info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0169433208000615info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:49:31Zoai:ri.conicet.gov.ar:11336/25400instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:49:32.084CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv The Bulk Band Structure and Inner Potential of Layered In4Se3
title The Bulk Band Structure and Inner Potential of Layered In4Se3
spellingShingle The Bulk Band Structure and Inner Potential of Layered In4Se3
Liu, J.
Layered Semiconductors
Bulk Band Structure
Photoemission
Fp-Lapw
title_short The Bulk Band Structure and Inner Potential of Layered In4Se3
title_full The Bulk Band Structure and Inner Potential of Layered In4Se3
title_fullStr The Bulk Band Structure and Inner Potential of Layered In4Se3
title_full_unstemmed The Bulk Band Structure and Inner Potential of Layered In4Se3
title_sort The Bulk Band Structure and Inner Potential of Layered In4Se3
dc.creator.none.fl_str_mv Liu, J.
Losovyj, Y. B.
Komesu, T.
Dowben, P.A.
Makinistian, Leonardo
Albanesi, Eduardo Aldo
Petukhov, A.G.
Galiy, P.
Fiyala, Y.
author Liu, J.
author_facet Liu, J.
Losovyj, Y. B.
Komesu, T.
Dowben, P.A.
Makinistian, Leonardo
Albanesi, Eduardo Aldo
Petukhov, A.G.
Galiy, P.
Fiyala, Y.
author_role author
author2 Losovyj, Y. B.
Komesu, T.
Dowben, P.A.
Makinistian, Leonardo
Albanesi, Eduardo Aldo
Petukhov, A.G.
Galiy, P.
Fiyala, Y.
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Layered Semiconductors
Bulk Band Structure
Photoemission
Fp-Lapw
topic Layered Semiconductors
Bulk Band Structure
Photoemission
Fp-Lapw
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.
Fil: Liu, J.. University Of Nebraska; Estados Unidos
Fil: Losovyj, Y. B.. University Of Nebraska; Estados Unidos
Fil: Komesu, T.. University Of Nebraska; Estados Unidos
Fil: Dowben, P.A.. University Of Nebraska; Estados Unidos
Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Petukhov, A.G.. South Dakota School of Mines; Estados Unidos
Fil: Galiy, P.. Lviv National University; Ucrania
Fil: Fiyala, Y.. Lviv National University; Ucrania
description The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.
publishDate 2008
dc.date.none.fl_str_mv 2008-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/25400
Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; et al.; The Bulk Band Structure and Inner Potential of Layered In4Se3; Elsevier Science; Applied Surface Science; 254; 12-2008; 4322-4325
0169-4332
CONICET Digital
CONICET
url http://hdl.handle.net/11336/25400
identifier_str_mv Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; et al.; The Bulk Band Structure and Inner Potential of Layered In4Se3; Elsevier Science; Applied Surface Science; 254; 12-2008; 4322-4325
0169-4332
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.apsusc.2008.01.061
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0169433208000615
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842268978468093952
score 13.13397

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