Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation
- Autores
- Lee, Yonghee; Lee, Seung Yoon; Choi, Jinheon; Ghenzi, Néstor; Han, Joon Kyu; Hwang, Cheol Seong
- Año de publicación
- 2025
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- A heterogeneous capacitor-less two-transistor (2T0C) dynamic random accessmemory (DRAM) cell is fabricated, featuring a write transistor with an amorphousindium–gallium–zinc–oxide (a-IGZO) channel and a read transistor with asingle crystal silicon (Si) channel. These transistors are vertically integrated toachieve high integration density. A data retention time of over 4800 s is achieveddue to the wide bandgap of a-IGZO, and a high sensing current of over166 μA μm1 is achieved due to the high mobility of the Si. This high sensingcurrent allows for a short read latency of 1.34 ns and 5-bit multilevel celloperation, the highest reported for 2T0C DRAM cells.
Fil: Lee, Yonghee. Seoul National University; Corea del Sur
Fil: Lee, Seung Yoon. Seoul National University; Corea del Sur
Fil: Choi, Jinheon. Seoul National University; Corea del Sur
Fil: Ghenzi, Néstor. Universidad Nacional de Avellaneda. Departamento de Prod. y Trabajo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Han, Joon Kyu. Seoul National University; Corea del Sur
Fil: Hwang, Cheol Seong. Seoul National University; Corea del Sur - Materia
-
transistor
analog
2t0c
memory - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/271609
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oai:ri.conicet.gov.ar:11336/271609 |
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CONICET Digital (CONICET) |
spelling |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel OperationLee, YongheeLee, Seung YoonChoi, JinheonGhenzi, NéstorHan, Joon KyuHwang, Cheol Seongtransistoranalog2t0cmemoryhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1A heterogeneous capacitor-less two-transistor (2T0C) dynamic random accessmemory (DRAM) cell is fabricated, featuring a write transistor with an amorphousindium–gallium–zinc–oxide (a-IGZO) channel and a read transistor with asingle crystal silicon (Si) channel. These transistors are vertically integrated toachieve high integration density. A data retention time of over 4800 s is achieveddue to the wide bandgap of a-IGZO, and a high sensing current of over166 μA μm1 is achieved due to the high mobility of the Si. This high sensingcurrent allows for a short read latency of 1.34 ns and 5-bit multilevel celloperation, the highest reported for 2T0C DRAM cells.Fil: Lee, Yonghee. Seoul National University; Corea del SurFil: Lee, Seung Yoon. Seoul National University; Corea del SurFil: Choi, Jinheon. Seoul National University; Corea del SurFil: Ghenzi, Néstor. Universidad Nacional de Avellaneda. Departamento de Prod. y Trabajo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Han, Joon Kyu. Seoul National University; Corea del SurFil: Hwang, Cheol Seong. Seoul National University; Corea del SurWiley VCH Verlag2025-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/271609Lee, Yonghee; Lee, Seung Yoon; Choi, Jinheon; Ghenzi, Néstor; Han, Joon Kyu; et al.; Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation; Wiley VCH Verlag; Physica Status Solidi-rapid Research Letters; 5-2025; 1-61862-6254CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://onlinelibrary.wiley.com/doi/10.1002/pssr.202500131info:eu-repo/semantics/altIdentifier/doi/10.1002/pssr.202500131info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:06:37Zoai:ri.conicet.gov.ar:11336/271609instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:06:37.94CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
title |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
spellingShingle |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation Lee, Yonghee transistor analog 2t0c memory |
title_short |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
title_full |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
title_fullStr |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
title_full_unstemmed |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
title_sort |
Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation |
dc.creator.none.fl_str_mv |
Lee, Yonghee Lee, Seung Yoon Choi, Jinheon Ghenzi, Néstor Han, Joon Kyu Hwang, Cheol Seong |
author |
Lee, Yonghee |
author_facet |
Lee, Yonghee Lee, Seung Yoon Choi, Jinheon Ghenzi, Néstor Han, Joon Kyu Hwang, Cheol Seong |
author_role |
author |
author2 |
Lee, Seung Yoon Choi, Jinheon Ghenzi, Néstor Han, Joon Kyu Hwang, Cheol Seong |
author2_role |
author author author author author |
dc.subject.none.fl_str_mv |
transistor analog 2t0c memory |
topic |
transistor analog 2t0c memory |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
A heterogeneous capacitor-less two-transistor (2T0C) dynamic random accessmemory (DRAM) cell is fabricated, featuring a write transistor with an amorphousindium–gallium–zinc–oxide (a-IGZO) channel and a read transistor with asingle crystal silicon (Si) channel. These transistors are vertically integrated toachieve high integration density. A data retention time of over 4800 s is achieveddue to the wide bandgap of a-IGZO, and a high sensing current of over166 μA μm1 is achieved due to the high mobility of the Si. This high sensingcurrent allows for a short read latency of 1.34 ns and 5-bit multilevel celloperation, the highest reported for 2T0C DRAM cells. Fil: Lee, Yonghee. Seoul National University; Corea del Sur Fil: Lee, Seung Yoon. Seoul National University; Corea del Sur Fil: Choi, Jinheon. Seoul National University; Corea del Sur Fil: Ghenzi, Néstor. Universidad Nacional de Avellaneda. Departamento de Prod. y Trabajo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Han, Joon Kyu. Seoul National University; Corea del Sur Fil: Hwang, Cheol Seong. Seoul National University; Corea del Sur |
description |
A heterogeneous capacitor-less two-transistor (2T0C) dynamic random accessmemory (DRAM) cell is fabricated, featuring a write transistor with an amorphousindium–gallium–zinc–oxide (a-IGZO) channel and a read transistor with asingle crystal silicon (Si) channel. These transistors are vertically integrated toachieve high integration density. A data retention time of over 4800 s is achieveddue to the wide bandgap of a-IGZO, and a high sensing current of over166 μA μm1 is achieved due to the high mobility of the Si. This high sensingcurrent allows for a short read latency of 1.34 ns and 5-bit multilevel celloperation, the highest reported for 2T0C DRAM cells. |
publishDate |
2025 |
dc.date.none.fl_str_mv |
2025-05 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/271609 Lee, Yonghee; Lee, Seung Yoon; Choi, Jinheon; Ghenzi, Néstor; Han, Joon Kyu; et al.; Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation; Wiley VCH Verlag; Physica Status Solidi-rapid Research Letters; 5-2025; 1-6 1862-6254 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/271609 |
identifier_str_mv |
Lee, Yonghee; Lee, Seung Yoon; Choi, Jinheon; Ghenzi, Néstor; Han, Joon Kyu; et al.; Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation; Wiley VCH Verlag; Physica Status Solidi-rapid Research Letters; 5-2025; 1-6 1862-6254 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://onlinelibrary.wiley.com/doi/10.1002/pssr.202500131 info:eu-repo/semantics/altIdentifier/doi/10.1002/pssr.202500131 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-nd/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Wiley VCH Verlag |
publisher.none.fl_str_mv |
Wiley VCH Verlag |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844613917442048000 |
score |
13.070432 |