Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene

Autores
Guzman Arellano, Robert Mikhail; Hernandez Nieves, Alexander David; Balseiro, Carlos Antonio; Usaj, Gonzalo
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of fluorine adatoms and not the impurity induced SOC based on the distortion of the graphene plane as in hydrogenated graphene. More interestingly, our DFT calculations show that SOC is strongly affected by both the type and concentrations of the graphene's carriers, being enhanced by electron doping and reduced by hole doping. This effect is due to the charge transfer to the fluorine adatom and the consequent change in the fluorine-carbon bonding. Our simple tight-binding model, that includes the SOC of the 2p orbitals of F and effective parameters based on maximally localized Wannier functions, is able to account for the effect. The strong enhancement of the SOC induced by graphene doping opens the possibility to tune the spin relaxation in this material.
Fil: Guzman Arellano, Robert Mikhail. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Hernandez Nieves, Alexander David. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Balseiro, Carlos Antonio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Usaj, Gonzalo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Materia
Graphene
Adatoms
Spin-Orbit
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/46058
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/46058
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Gate-induced enhancement of spin-orbit coupling in dilute fluorinated grapheneGuzman Arellano, Robert MikhailHernandez Nieves, Alexander DavidBalseiro, Carlos AntonioUsaj, GonzaloGrapheneAdatomsSpin-Orbithttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of fluorine adatoms and not the impurity induced SOC based on the distortion of the graphene plane as in hydrogenated graphene. More interestingly, our DFT calculations show that SOC is strongly affected by both the type and concentrations of the graphene's carriers, being enhanced by electron doping and reduced by hole doping. This effect is due to the charge transfer to the fluorine adatom and the consequent change in the fluorine-carbon bonding. Our simple tight-binding model, that includes the SOC of the 2p orbitals of F and effective parameters based on maximally localized Wannier functions, is able to account for the effect. The strong enhancement of the SOC induced by graphene doping opens the possibility to tune the spin relaxation in this material.Fil: Guzman Arellano, Robert Mikhail. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Hernandez Nieves, Alexander David. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Balseiro, Carlos Antonio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Usaj, Gonzalo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaAmerican Physical Society2015-05-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/46058Guzman Arellano, Robert Mikhail; Hernandez Nieves, Alexander David; Balseiro, Carlos Antonio; Usaj, Gonzalo; Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 91; 19; 11-5-2015; 195408-1954081098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.91.195408info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.91.195408info:eu-repo/semantics/altIdentifier/url/http://fisica.cab.cnea.gov.ar/solidos/personales/usaj/mypdf/Guzman-Arellano2015%20-%20Gate%20induced%20enhancement%20of%20spin-orbit%20coupling%20in%20dilute%20fluorinated%20graphene.pdfinfo:eu-repo/semantics/altIdentifier/url/https://arxiv.org/abs/1503.01395info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:06:24Zoai:ri.conicet.gov.ar:11336/46058instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:06:24.5CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
title Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
spellingShingle Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
Guzman Arellano, Robert Mikhail
Graphene
Adatoms
Spin-Orbit
title_short Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
title_full Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
title_fullStr Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
title_full_unstemmed Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
title_sort Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
dc.creator.none.fl_str_mv Guzman Arellano, Robert Mikhail
Hernandez Nieves, Alexander David
Balseiro, Carlos Antonio
Usaj, Gonzalo
author Guzman Arellano, Robert Mikhail
author_facet Guzman Arellano, Robert Mikhail
Hernandez Nieves, Alexander David
Balseiro, Carlos Antonio
Usaj, Gonzalo
author_role author
author2 Hernandez Nieves, Alexander David
Balseiro, Carlos Antonio
Usaj, Gonzalo
author2_role author
author
author
dc.subject.none.fl_str_mv Graphene
Adatoms
Spin-Orbit
topic Graphene
Adatoms
Spin-Orbit
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of fluorine adatoms and not the impurity induced SOC based on the distortion of the graphene plane as in hydrogenated graphene. More interestingly, our DFT calculations show that SOC is strongly affected by both the type and concentrations of the graphene's carriers, being enhanced by electron doping and reduced by hole doping. This effect is due to the charge transfer to the fluorine adatom and the consequent change in the fluorine-carbon bonding. Our simple tight-binding model, that includes the SOC of the 2p orbitals of F and effective parameters based on maximally localized Wannier functions, is able to account for the effect. The strong enhancement of the SOC induced by graphene doping opens the possibility to tune the spin relaxation in this material.
Fil: Guzman Arellano, Robert Mikhail. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Hernandez Nieves, Alexander David. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Balseiro, Carlos Antonio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Usaj, Gonzalo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
description We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of fluorine adatoms and not the impurity induced SOC based on the distortion of the graphene plane as in hydrogenated graphene. More interestingly, our DFT calculations show that SOC is strongly affected by both the type and concentrations of the graphene's carriers, being enhanced by electron doping and reduced by hole doping. This effect is due to the charge transfer to the fluorine adatom and the consequent change in the fluorine-carbon bonding. Our simple tight-binding model, that includes the SOC of the 2p orbitals of F and effective parameters based on maximally localized Wannier functions, is able to account for the effect. The strong enhancement of the SOC induced by graphene doping opens the possibility to tune the spin relaxation in this material.
publishDate 2015
dc.date.none.fl_str_mv 2015-05-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/46058
Guzman Arellano, Robert Mikhail; Hernandez Nieves, Alexander David; Balseiro, Carlos Antonio; Usaj, Gonzalo; Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 91; 19; 11-5-2015; 195408-195408
1098-0121
CONICET Digital
CONICET
url http://hdl.handle.net/11336/46058
identifier_str_mv Guzman Arellano, Robert Mikhail; Hernandez Nieves, Alexander David; Balseiro, Carlos Antonio; Usaj, Gonzalo; Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 91; 19; 11-5-2015; 195408-195408
1098-0121
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.91.195408
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.91.195408
info:eu-repo/semantics/altIdentifier/url/http://fisica.cab.cnea.gov.ar/solidos/personales/usaj/mypdf/Guzman-Arellano2015%20-%20Gate%20induced%20enhancement%20of%20spin-orbit%20coupling%20in%20dilute%20fluorinated%20graphene.pdf
info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/abs/1503.01395
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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