Sengupta, A., Sarkar, C. K., & Requejo, F. G. (2011). Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices. Web
Citación estilo ChicagoSengupta, Amretashis, Chandan Kumar Sarkar, and Felix Gregorio Requejo. Comparative Study of CNT, Silicon Nanowire and Fullerene Embedded Multilayer High-k Gate Dielectric MOS Memory Devices. 2011.
Cita MLASengupta, Amretashis, Chandan Kumar Sarkar, and Felix Gregorio Requejo. Comparative Study of CNT, Silicon Nanowire and Fullerene Embedded Multilayer High-k Gate Dielectric MOS Memory Devices. 2011.
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