Experimental determination of multiple ionization cross sections in Si by electron impact

Autores
Pérez, Pablo Daniel; Sepulveda Peñaloza, Andres Humberto; Castellano, Gustavo Eugenio; Trincavelli, Jorge Carlos
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The thin sample method is often used to experimentally determine ionization cross sections, especially when focusing on the low overvoltage region. The simplicity of the formalism involved in this method is very appealing, but some experimental complications arise in the preparation of thin films. In this work, a thick sample method was used to measure the Si-K x-ray production cross section by electron impact. The good agreement between the results obtained and the values reported in the literature validates the method and the parameters used. The advantages and disadvantages of the method are discussed and its application is extended to the determination of Si multiple-ionization cross sections, where the very low emission rates (around two orders of magnitude lower than the single-ionization case) make the use of the thin sample method impracticable.
Fil: Pérez, Pablo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Fil: Sepulveda Peñaloza, Andres Humberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Fil: Castellano, Gustavo Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Fil: Trincavelli, Jorge Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Materia
CROSS-SECTION
MULTIPLE
IONISATION
ELECTRON
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/51156
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Experimental determination of multiple ionization cross sections in Si by electron impactPérez, Pablo DanielSepulveda Peñaloza, Andres HumbertoCastellano, Gustavo EugenioTrincavelli, Jorge CarlosCROSS-SECTIONMULTIPLEIONISATIONELECTRONhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The thin sample method is often used to experimentally determine ionization cross sections, especially when focusing on the low overvoltage region. The simplicity of the formalism involved in this method is very appealing, but some experimental complications arise in the preparation of thin films. In this work, a thick sample method was used to measure the Si-K x-ray production cross section by electron impact. The good agreement between the results obtained and the values reported in the literature validates the method and the parameters used. The advantages and disadvantages of the method are discussed and its application is extended to the determination of Si multiple-ionization cross sections, where the very low emission rates (around two orders of magnitude lower than the single-ionization case) make the use of the thin sample method impracticable.Fil: Pérez, Pablo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; ArgentinaFil: Sepulveda Peñaloza, Andres Humberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; ArgentinaFil: Castellano, Gustavo Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; ArgentinaFil: Trincavelli, Jorge Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; ArgentinaAmerican Physical Society2015-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/51156Pérez, Pablo Daniel; Sepulveda Peñaloza, Andres Humberto; Castellano, Gustavo Eugenio; Trincavelli, Jorge Carlos; Experimental determination of multiple ionization cross sections in Si by electron impact; American Physical Society; Physical Review A: Atomic, Molecular and Optical Physics; 92; 6; 12-2015; 62708001-627080081050-2947CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevA.92.062708info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/pra/abstract/10.1103/PhysRevA.92.062708info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:06:49Zoai:ri.conicet.gov.ar:11336/51156instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:06:49.384CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Experimental determination of multiple ionization cross sections in Si by electron impact
title Experimental determination of multiple ionization cross sections in Si by electron impact
spellingShingle Experimental determination of multiple ionization cross sections in Si by electron impact
Pérez, Pablo Daniel
CROSS-SECTION
MULTIPLE
IONISATION
ELECTRON
title_short Experimental determination of multiple ionization cross sections in Si by electron impact
title_full Experimental determination of multiple ionization cross sections in Si by electron impact
title_fullStr Experimental determination of multiple ionization cross sections in Si by electron impact
title_full_unstemmed Experimental determination of multiple ionization cross sections in Si by electron impact
title_sort Experimental determination of multiple ionization cross sections in Si by electron impact
dc.creator.none.fl_str_mv Pérez, Pablo Daniel
Sepulveda Peñaloza, Andres Humberto
Castellano, Gustavo Eugenio
Trincavelli, Jorge Carlos
author Pérez, Pablo Daniel
author_facet Pérez, Pablo Daniel
Sepulveda Peñaloza, Andres Humberto
Castellano, Gustavo Eugenio
Trincavelli, Jorge Carlos
author_role author
author2 Sepulveda Peñaloza, Andres Humberto
Castellano, Gustavo Eugenio
Trincavelli, Jorge Carlos
author2_role author
author
author
dc.subject.none.fl_str_mv CROSS-SECTION
MULTIPLE
IONISATION
ELECTRON
topic CROSS-SECTION
MULTIPLE
IONISATION
ELECTRON
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The thin sample method is often used to experimentally determine ionization cross sections, especially when focusing on the low overvoltage region. The simplicity of the formalism involved in this method is very appealing, but some experimental complications arise in the preparation of thin films. In this work, a thick sample method was used to measure the Si-K x-ray production cross section by electron impact. The good agreement between the results obtained and the values reported in the literature validates the method and the parameters used. The advantages and disadvantages of the method are discussed and its application is extended to the determination of Si multiple-ionization cross sections, where the very low emission rates (around two orders of magnitude lower than the single-ionization case) make the use of the thin sample method impracticable.
Fil: Pérez, Pablo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Fil: Sepulveda Peñaloza, Andres Humberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Fil: Castellano, Gustavo Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
Fil: Trincavelli, Jorge Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía y Física; Argentina
description The thin sample method is often used to experimentally determine ionization cross sections, especially when focusing on the low overvoltage region. The simplicity of the formalism involved in this method is very appealing, but some experimental complications arise in the preparation of thin films. In this work, a thick sample method was used to measure the Si-K x-ray production cross section by electron impact. The good agreement between the results obtained and the values reported in the literature validates the method and the parameters used. The advantages and disadvantages of the method are discussed and its application is extended to the determination of Si multiple-ionization cross sections, where the very low emission rates (around two orders of magnitude lower than the single-ionization case) make the use of the thin sample method impracticable.
publishDate 2015
dc.date.none.fl_str_mv 2015-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/51156
Pérez, Pablo Daniel; Sepulveda Peñaloza, Andres Humberto; Castellano, Gustavo Eugenio; Trincavelli, Jorge Carlos; Experimental determination of multiple ionization cross sections in Si by electron impact; American Physical Society; Physical Review A: Atomic, Molecular and Optical Physics; 92; 6; 12-2015; 62708001-62708008
1050-2947
CONICET Digital
CONICET
url http://hdl.handle.net/11336/51156
identifier_str_mv Pérez, Pablo Daniel; Sepulveda Peñaloza, Andres Humberto; Castellano, Gustavo Eugenio; Trincavelli, Jorge Carlos; Experimental determination of multiple ionization cross sections in Si by electron impact; American Physical Society; Physical Review A: Atomic, Molecular and Optical Physics; 92; 6; 12-2015; 62708001-62708008
1050-2947
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevA.92.062708
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/pra/abstract/10.1103/PhysRevA.92.062708
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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