Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions

Autores
Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).
Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Yang, Ilkyu. Pohang University of Science and Technology; Corea del Sur
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Kim, Jeehoon. Pohang University of Science and Technology; Corea del Sur. Institute for Basic Science; Corea del Sur
Fil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Materia
Thin Films
Bilayers
Superconductor
Ferroelectricity
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/53500
Acceder
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctionsNavarro Fernández, Henry LucianoYang, IlkyuSirena, MartinKim, JeehoonHaberkorn, Nestor FabianThin FilmsBilayersSuperconductorFerroelectricityhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Yang, Ilkyu. Pohang University of Science and Technology; Corea del SurFil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Kim, Jeehoon. Pohang University of Science and Technology; Corea del Sur. Institute for Basic Science; Corea del SurFil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaAmerican Institute of Physics2015-07-30info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/53500Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian; Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions; American Institute of Physics; Journal of Applied Physics; 118; 4; 30-7-2015; 45308-453140021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4927751info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4927751info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:37:00Zoai:ri.conicet.gov.ar:11336/53500instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:37:01.182CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
title Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
spellingShingle Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
Navarro Fernández, Henry Luciano
Thin Films
Bilayers
Superconductor
Ferroelectricity
title_short Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
title_full Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
title_fullStr Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
title_full_unstemmed Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
title_sort Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
dc.creator.none.fl_str_mv Navarro Fernández, Henry Luciano
Yang, Ilkyu
Sirena, Martin
Kim, Jeehoon
Haberkorn, Nestor Fabian
author Navarro Fernández, Henry Luciano
author_facet Navarro Fernández, Henry Luciano
Yang, Ilkyu
Sirena, Martin
Kim, Jeehoon
Haberkorn, Nestor Fabian
author_role author
author2 Yang, Ilkyu
Sirena, Martin
Kim, Jeehoon
Haberkorn, Nestor Fabian
author2_role author
author
author
author
dc.subject.none.fl_str_mv Thin Films
Bilayers
Superconductor
Ferroelectricity
topic Thin Films
Bilayers
Superconductor
Ferroelectricity
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).
Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Yang, Ilkyu. Pohang University of Science and Technology; Corea del Sur
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Kim, Jeehoon. Pohang University of Science and Technology; Corea del Sur. Institute for Basic Science; Corea del Sur
Fil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
description The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).
publishDate 2015
dc.date.none.fl_str_mv 2015-07-30
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/53500
Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian; Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions; American Institute of Physics; Journal of Applied Physics; 118; 4; 30-7-2015; 45308-45314
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/53500
identifier_str_mv Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian; Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions; American Institute of Physics; Journal of Applied Physics; 118; 4; 30-7-2015; 45308-45314
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4927751
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4927751
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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