Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions
- Autores
- Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian
- Año de publicación
- 2015
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).
Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Yang, Ilkyu. Pohang University of Science and Technology; Corea del Sur
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Kim, Jeehoon. Pohang University of Science and Technology; Corea del Sur. Institute for Basic Science; Corea del Sur
Fil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina - Materia
-
Thin Films
Bilayers
Superconductor
Ferroelectricity - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/53500
Ver los metadatos del registro completo
id |
CONICETDig_15d04617c039c7866ae82edc85ddd82a |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/53500 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctionsNavarro Fernández, Henry LucianoYang, IlkyuSirena, MartinKim, JeehoonHaberkorn, Nestor FabianThin FilmsBilayersSuperconductorFerroelectricityhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Yang, Ilkyu. Pohang University of Science and Technology; Corea del SurFil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Kim, Jeehoon. Pohang University of Science and Technology; Corea del Sur. Institute for Basic Science; Corea del SurFil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaAmerican Institute of Physics2015-07-30info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/53500Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian; Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions; American Institute of Physics; Journal of Applied Physics; 118; 4; 30-7-2015; 45308-453140021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4927751info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4927751info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:43:42Zoai:ri.conicet.gov.ar:11336/53500instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:43:42.306CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
title |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
spellingShingle |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions Navarro Fernández, Henry Luciano Thin Films Bilayers Superconductor Ferroelectricity |
title_short |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
title_full |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
title_fullStr |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
title_full_unstemmed |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
title_sort |
Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions |
dc.creator.none.fl_str_mv |
Navarro Fernández, Henry Luciano Yang, Ilkyu Sirena, Martin Kim, Jeehoon Haberkorn, Nestor Fabian |
author |
Navarro Fernández, Henry Luciano |
author_facet |
Navarro Fernández, Henry Luciano Yang, Ilkyu Sirena, Martin Kim, Jeehoon Haberkorn, Nestor Fabian |
author_role |
author |
author2 |
Yang, Ilkyu Sirena, Martin Kim, Jeehoon Haberkorn, Nestor Fabian |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
Thin Films Bilayers Superconductor Ferroelectricity |
topic |
Thin Films Bilayers Superconductor Ferroelectricity |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier). Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina Fil: Yang, Ilkyu. Pohang University of Science and Technology; Corea del Sur Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Kim, Jeehoon. Pohang University of Science and Technology; Corea del Sur. Institute for Basic Science; Corea del Sur Fil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina |
description |
The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16γnm thick GdBa2Cu3O7-δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4γnm. The BaTiO3 layers present an energy barrier of 1.2γeV and an attenuation length of 0.35-0.5γnm (depending on the applied voltage). The GdBa2Cu3O7-δ electrode is totally covered by a BaTiO3 thickness above 3γnm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4γnm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7-δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier). |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015-07-30 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/53500 Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian; Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions; American Institute of Physics; Journal of Applied Physics; 118; 4; 30-7-2015; 45308-45314 0021-8979 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/53500 |
identifier_str_mv |
Navarro Fernández, Henry Luciano; Yang, Ilkyu; Sirena, Martin; Kim, Jeehoon; Haberkorn, Nestor Fabian; Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7-δ/BaTiO3 bilayers for application in tunnel junctions; American Institute of Physics; Journal of Applied Physics; 118; 4; 30-7-2015; 45308-45314 0021-8979 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4927751 info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4927751 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844613375302041600 |
score |
13.070432 |