High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics

Autores
Sirena, Martin; Aviles Felix, Luis Steven; Haberkorn, Nestor Fabian
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
High transition temperature superconductor (HTc)/SrTiO3 (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10−5 defects/μm2). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.
Fil: Sirena, Martin. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Aviles Felix, Luis Steven. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Haberkorn, Nestor Fabian. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina
Materia
AFM
JOSEPHSON JUNCTIONS
CAFM
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/9025
Acceder
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network_name_str CONICET Digital (CONICET)
spelling High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast ElectronicsSirena, MartinAviles Felix, Luis StevenHaberkorn, Nestor FabianAFMJOSEPHSON JUNCTIONSCAFMhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1High transition temperature superconductor (HTc)/SrTiO3 (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10−5 defects/μm2). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.Fil: Sirena, Martin. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Aviles Felix, Luis Steven. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Haberkorn, Nestor Fabian. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); ArgentinaAmerican Institute Of Physics2013-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/9025Sirena, Martin; Aviles Felix, Luis Steven; Haberkorn, Nestor Fabian; High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics; American Institute Of Physics; Applied Physics Letters; 103; 8-2013; 52902-529050003-69511077-3118enginfo:eu-repo/semantics/altIdentifier/url/http://scitation.aip.org/content/aip/journal/apl/103/5/10.1063/1.4816416info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4816416info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:09:51Zoai:ri.conicet.gov.ar:11336/9025instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:09:52.194CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
title High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
spellingShingle High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
Sirena, Martin
AFM
JOSEPHSON JUNCTIONS
CAFM
title_short High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
title_full High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
title_fullStr High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
title_full_unstemmed High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
title_sort High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics
dc.creator.none.fl_str_mv Sirena, Martin
Aviles Felix, Luis Steven
Haberkorn, Nestor Fabian
author Sirena, Martin
author_facet Sirena, Martin
Aviles Felix, Luis Steven
Haberkorn, Nestor Fabian
author_role author
author2 Aviles Felix, Luis Steven
Haberkorn, Nestor Fabian
author2_role author
author
dc.subject.none.fl_str_mv AFM
JOSEPHSON JUNCTIONS
CAFM
topic AFM
JOSEPHSON JUNCTIONS
CAFM
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv High transition temperature superconductor (HTc)/SrTiO3 (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10−5 defects/μm2). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.
Fil: Sirena, Martin. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Aviles Felix, Luis Steven. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Haberkorn, Nestor Fabian. Comision Nacional de Energia Atomica. Gerencia del Area de Investigaciones y Aplicaciones no Nucleares. Gerencia de Fisica (CAB); Argentina
description High transition temperature superconductor (HTc)/SrTiO3 (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10−5 defects/μm2). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.
publishDate 2013
dc.date.none.fl_str_mv 2013-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/9025
Sirena, Martin; Aviles Felix, Luis Steven; Haberkorn, Nestor Fabian; High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics; American Institute Of Physics; Applied Physics Letters; 103; 8-2013; 52902-52905
0003-6951
1077-3118
url http://hdl.handle.net/11336/9025
identifier_str_mv Sirena, Martin; Aviles Felix, Luis Steven; Haberkorn, Nestor Fabian; High Transition Temperature Superconductor/Insulator Bilayers for the Development of Ultra-Fast Electronics; American Institute Of Physics; Applied Physics Letters; 103; 8-2013; 52902-52905
0003-6951
1077-3118
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://scitation.aip.org/content/aip/journal/apl/103/5/10.1063/1.4816416
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4816416
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute Of Physics
publisher.none.fl_str_mv American Institute Of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.004268

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