ZnO Nanowires on Graphite with Improved UV Photoluminescence

Autores
Tosi, Ezequiel; Tirado, Monica Cecilia; Zampieri, Guillermo Enrique; Comedi, David Mario
Año de publicación
2018
Idioma
inglés
Tipo de recurso
documento de conferencia
Estado
versión publicada
Descripción
INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission.
Fil: Tosi, Ezequiel. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
Fil: Zampieri, Guillermo Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
11th International conference on Advanced Nano Materials
Aveiro
Portugal
University of Aveiro
Materia
NANOWIRES
ZnO
IMPROVED UV PHOTOLUMINESCENCE
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/243422

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network_name_str CONICET Digital (CONICET)
spelling ZnO Nanowires on Graphite with Improved UV PhotoluminescenceTosi, EzequielTirado, Monica CeciliaZampieri, Guillermo EnriqueComedi, David MarioNANOWIRESZnOIMPROVED UV PHOTOLUMINESCENCEhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission.Fil: Tosi, Ezequiel. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; ArgentinaFil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; ArgentinaFil: Zampieri, Guillermo Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina11th International conference on Advanced Nano MaterialsAveiroPortugalUniversity of AveiroUniversity of Aveiro2018info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectConferenciaBookhttp://purl.org/coar/resource_type/c_5794info:ar-repo/semantics/documentoDeConferenciaapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/243422ZnO Nanowires on Graphite with Improved UV Photoluminescence; 11th International conference on Advanced Nano Materials; Aveiro; Portugal; 2018; 1-1CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.dropbox.com/scl/fo/d8loaha7h2b95u33lfu4u/ALzqR6aJU5l5ZpnD_KYUkrc/Abstract%20Book?rlkey=3d7tu75dg1cc29a8njptenkl4&e=1&st=cunmce8u&dl=0Internacionalinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:36:53Zoai:ri.conicet.gov.ar:11336/243422instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:36:54.229CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv ZnO Nanowires on Graphite with Improved UV Photoluminescence
title ZnO Nanowires on Graphite with Improved UV Photoluminescence
spellingShingle ZnO Nanowires on Graphite with Improved UV Photoluminescence
Tosi, Ezequiel
NANOWIRES
ZnO
IMPROVED UV PHOTOLUMINESCENCE
title_short ZnO Nanowires on Graphite with Improved UV Photoluminescence
title_full ZnO Nanowires on Graphite with Improved UV Photoluminescence
title_fullStr ZnO Nanowires on Graphite with Improved UV Photoluminescence
title_full_unstemmed ZnO Nanowires on Graphite with Improved UV Photoluminescence
title_sort ZnO Nanowires on Graphite with Improved UV Photoluminescence
dc.creator.none.fl_str_mv Tosi, Ezequiel
Tirado, Monica Cecilia
Zampieri, Guillermo Enrique
Comedi, David Mario
author Tosi, Ezequiel
author_facet Tosi, Ezequiel
Tirado, Monica Cecilia
Zampieri, Guillermo Enrique
Comedi, David Mario
author_role author
author2 Tirado, Monica Cecilia
Zampieri, Guillermo Enrique
Comedi, David Mario
author2_role author
author
author
dc.subject.none.fl_str_mv NANOWIRES
ZnO
IMPROVED UV PHOTOLUMINESCENCE
topic NANOWIRES
ZnO
IMPROVED UV PHOTOLUMINESCENCE
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission.
Fil: Tosi, Ezequiel. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
Fil: Zampieri, Guillermo Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
11th International conference on Advanced Nano Materials
Aveiro
Portugal
University of Aveiro
description INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission.
publishDate 2018
dc.date.none.fl_str_mv 2018
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ZnO Nanowires on Graphite with Improved UV Photoluminescence; 11th International conference on Advanced Nano Materials; Aveiro; Portugal; 2018; 1-1
CONICET Digital
CONICET
url http://hdl.handle.net/11336/243422
identifier_str_mv ZnO Nanowires on Graphite with Improved UV Photoluminescence; 11th International conference on Advanced Nano Materials; Aveiro; Portugal; 2018; 1-1
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
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dc.publisher.none.fl_str_mv University of Aveiro
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