ZnO Nanowires on Graphite with Improved UV Photoluminescence
- Autores
- Tosi, Ezequiel; Tirado, Monica Cecilia; Zampieri, Guillermo Enrique; Comedi, David Mario
- Año de publicación
- 2018
- Idioma
- inglés
- Tipo de recurso
- documento de conferencia
- Estado
- versión publicada
- Descripción
- INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission.
Fil: Tosi, Ezequiel. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
Fil: Zampieri, Guillermo Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina
11th International conference on Advanced Nano Materials
Aveiro
Portugal
University of Aveiro - Materia
-
NANOWIRES
ZnO
IMPROVED UV PHOTOLUMINESCENCE - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/243422
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ZnO Nanowires on Graphite with Improved UV PhotoluminescenceTosi, EzequielTirado, Monica CeciliaZampieri, Guillermo EnriqueComedi, David MarioNANOWIRESZnOIMPROVED UV PHOTOLUMINESCENCEhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission.Fil: Tosi, Ezequiel. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; ArgentinaFil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; ArgentinaFil: Zampieri, Guillermo Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina11th International conference on Advanced Nano MaterialsAveiroPortugalUniversity of AveiroUniversity of Aveiro2018info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectConferenciaBookhttp://purl.org/coar/resource_type/c_5794info:ar-repo/semantics/documentoDeConferenciaapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/243422ZnO Nanowires on Graphite with Improved UV Photoluminescence; 11th International conference on Advanced Nano Materials; Aveiro; Portugal; 2018; 1-1CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.dropbox.com/scl/fo/d8loaha7h2b95u33lfu4u/ALzqR6aJU5l5ZpnD_KYUkrc/Abstract%20Book?rlkey=3d7tu75dg1cc29a8njptenkl4&e=1&st=cunmce8u&dl=0Internacionalinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:36:53Zoai:ri.conicet.gov.ar:11336/243422instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:36:54.229CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
title |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
spellingShingle |
ZnO Nanowires on Graphite with Improved UV Photoluminescence Tosi, Ezequiel NANOWIRES ZnO IMPROVED UV PHOTOLUMINESCENCE |
title_short |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
title_full |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
title_fullStr |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
title_full_unstemmed |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
title_sort |
ZnO Nanowires on Graphite with Improved UV Photoluminescence |
dc.creator.none.fl_str_mv |
Tosi, Ezequiel Tirado, Monica Cecilia Zampieri, Guillermo Enrique Comedi, David Mario |
author |
Tosi, Ezequiel |
author_facet |
Tosi, Ezequiel Tirado, Monica Cecilia Zampieri, Guillermo Enrique Comedi, David Mario |
author_role |
author |
author2 |
Tirado, Monica Cecilia Zampieri, Guillermo Enrique Comedi, David Mario |
author2_role |
author author author |
dc.subject.none.fl_str_mv |
NANOWIRES ZnO IMPROVED UV PHOTOLUMINESCENCE |
topic |
NANOWIRES ZnO IMPROVED UV PHOTOLUMINESCENCE |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.10 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission. Fil: Tosi, Ezequiel. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina Fil: Zampieri, Guillermo Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina 11th International conference on Advanced Nano Materials Aveiro Portugal University of Aveiro |
description |
INTRODUCTIONBroadband semiconductors (such as ZnO) stand out inopto and microelectronics as they allow the developmentof transparent electronics. ZnO, with its diversenanostructured morphologies (nanowires, nanorods,nanocrystalline thin films, etc.) is an extremely attractivecompound to use in a great variety of nanotechnologicalapplications. ZnO also exhibits a high exciton bidingenergy of 60 meV and a prohibited bandwidth in the UV(3,37 eV), making it a great candidate for applications inoptoelectronics1,2. In this work, a detailed characterizationof the morphology and photoluminescence (PL)properties of ZnO nanowires (NWs) grown on differentcarbon substrate is presented.EXPERIMENTAL STUDYZnO NWs were grown through the vapor-phase transportmethod, on carbon substrates (compacted graphite andcarbon fibers) in a tubular furnace under Ar and O flow.In contrast to NWs grown on Si or other semiconductorsubstrates, metallic catalysers3 are not necessary, as theNWs growth occurs directly on the surface of the carbonsubstrates. The morphology, chemical composition andthe stoichiometry of the NWs grown, as well as the maincharacteristics of the valence band density of states closeto Fermi level, were studied by x-ray photoelectronspectroscopy (XPS). Photoluminescence spectra were alsomeasured.RESULTS AND DISCUSSIONPL dependence with excitation power was measured andanalyzed in the different samples: ZnO NWs oncompacted graphite; ZnO NWs on carbon fibers; ZnONWs transferred on Si; and ZnO crystal (see Fig. 1) aswell as the evolution of the ultraviolet (UV) and greenemission intensities for all the samples (see Fig. 2). Theresults show an increase by 3 orders of magnitude in theUV emission intensity for the NWs grown on compactedgraphite with respect to the UV intensity measured in theothers samples and also in comparison to results obtainedin a previous work4.CONCLUSIONIncreasing the emission efficiency is of great interest forapplications in photonics and UV optoelectronics, and isusually achieved from the inhibition of visible emission,with the consequent increase in UV emission5. However,in the ZnO NWs grown on compacted graphite it wasfound that the high efficiency is produced by aconsiderable increase in UV intensity without the need tosuppress the visible emission. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/publishedVersion info:eu-repo/semantics/conferenceObject Conferencia Book http://purl.org/coar/resource_type/c_5794 info:ar-repo/semantics/documentoDeConferencia |
status_str |
publishedVersion |
format |
conferenceObject |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/243422 ZnO Nanowires on Graphite with Improved UV Photoluminescence; 11th International conference on Advanced Nano Materials; Aveiro; Portugal; 2018; 1-1 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/243422 |
identifier_str_mv |
ZnO Nanowires on Graphite with Improved UV Photoluminescence; 11th International conference on Advanced Nano Materials; Aveiro; Portugal; 2018; 1-1 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
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info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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openAccess |
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https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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Internacional |
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University of Aveiro |
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University of Aveiro |
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reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
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dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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