A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells

Authors
Strengers, J.; Rubinelli, Francisco Alberto; Rath, J. K.; Schropp, R. E. I.
Publication Year
2006
Language
English
Format
article
Status
Published version
Description
Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. Fitting of the solar cell characteristic curves shows thatthis material has a density of dangling bonds and drift mobility that are comparable to that of amorphous silicon, whereas its mobility bandgap is closer to the value of crystalline silicon. These fittings can be done assuming homogeneous electrical parameters in the intrinsic layers.A maximum in solar cell performance was seen for i-layer thickness of 3000 nm.
Fil: Strengers, J.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rath, J. K.. Utrecht University; Países Bajos
Fil: Schropp, R. E. I.. Utrecht University; Países Bajos
Subject
Solar cells
Microcrystalline Silicon
Computer modeling
Characteristic curves
Ingeniería Eléctrica y Electrónica
Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
INGENIERÍAS Y TECNOLOGÍAS
Access level
Restricted access
License
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repository
CONICET Digital (CONICET)
Institution
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identifier
oai:ri.conicet.gov.ar:11336/20891